@inproceedings{1a7244eab1ea46518270c4262a465b24,
title = "Change of electrical properties of rutile- and anatase-TiO2 films by atomic layer deposited Al2O3",
abstract = "The electrical characteristics of rutile- and anatase-type TiO2 films were investigated by supplying alternatively pulses of trimethylaluminum (TMA) and H2O vapours after AI2O3 deposition using atomic layer deposition (ALD). As-grown rutile- and anatase-TiO2 films had an insulative property of ∼105ωcm, but its resistivity dropped dramatically to 10-1-10-2 ωcm and stayed low after supplying 5 cycles for ALD of AI2O3. The carrier density values of both TiO2 films were 1019-1020 cm-3 in the low-resistivity region. The Hall mobility values were 0.5-15 cm2V-1s-1, which correspond well with the literature values of 0.2-6 and 10 cm2V-1s-1 for thin-film and single-crystal anatase-TiO2, respectively. We propose one mechanism that oxygen vacancies must be formed by the reaction of adsorbed TMA precursor and the oxygen in TiO2 film after ALD-AI2O3 deposition and leads to electron generation, and results in change of resistivity from an insulative into a semiconductor characteristic.",
author = "Toshihide Nabatame and Ippei Yamamoto and Tomomi Sawada and Akihiko Ohi and Dao, {Thang Duy} and Tomoji Ohishi and Tadaaki Nagao",
year = "2019",
month = jan,
day = "1",
doi = "10.1149/09203.0015ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "15--21",
editor = "Fred Roozeboom and {De Gendt}, Stefan and Jolien Dendooven and Elam, {Jeffrey W.} and {van der Straten}, Oscar and Chanyuan Liu and Ganesh Sundaram and Andrea Illiberi",
booktitle = "Atomic Layer Deposition Applications 15",
edition = "3",
note = "International Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting ; Conference date: 13-10-2019 Through 17-10-2019",
}