Change of electrical properties of rutile- and anatase-TiO2 films by atomic layer deposited Al2O3

Toshihide Nabatame; Ippei Yamamoto; Tomomi Sawada; Akihiko Ohi; Thang Duy Dao; Tomoji Ohishi; Tadaaki Nagao

doi:10.1149/09203.0015ecst

Change of electrical properties of rutile- and anatase-TiO₂ films by atomic layer deposited Al₂O₃

Toshihide Nabatame, Ippei Yamamoto, Tomomi Sawada, Akihiko Ohi, Thang Duy Dao, Tomoji Ohishi, Tadaaki Nagao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The electrical characteristics of rutile- and anatase-type TiO₂ films were investigated by supplying alternatively pulses of trimethylaluminum (TMA) and H₂O vapours after AI₂O₃ deposition using atomic layer deposition (ALD). As-grown rutile- and anatase-TiO₂ films had an insulative property of ∼10⁵ωcm, but its resistivity dropped dramatically to 10^-1-10^-2 ωcm and stayed low after supplying 5 cycles for ALD of AI₂O₃. The carrier density values of both TiO₂ films were 10¹⁹-10²⁰ cm^-3 in the low-resistivity region. The Hall mobility values were 0.5-15 cm²V^-1s^-1, which correspond well with the literature values of 0.2-6 and 10 cm²V^-1s^-1 for thin-film and single-crystal anatase-TiO₂, respectively. We propose one mechanism that oxygen vacancies must be formed by the reaction of adsorbed TMA precursor and the oxygen in TiO₂ film after ALD-AI₂O₃ deposition and leads to electron generation, and results in change of resistivity from an insulative into a semiconductor characteristic.

Original language	English
Title of host publication	Atomic Layer Deposition Applications 15
Editors	Fred Roozeboom, Stefan De Gendt, Jolien Dendooven, Jeffrey W. Elam, Oscar van der Straten, Chanyuan Liu, Ganesh Sundaram, Andrea Illiberi
Publisher	Electrochemical Society Inc.
Pages	15-21
Number of pages	7
Edition	3
ISBN (Electronic)	9781607688778
ISBN (Print)	9781607688778
DOIs	https://doi.org/10.1149/09203.0015ecst
Publication status	Published - 2019
Event	International Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting - Atlanta, United States Duration: 2019 Oct 13 → 2019 Oct 17

Publication series

Name	ECS Transactions
Number	3
Volume	92
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	International Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting
Country/Territory	United States
City	Atlanta
Period	19/10/13 → 19/10/17

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/09203.0015ecst

Cite this

Nabatame, T., Yamamoto, I., Sawada, T., Ohi, A., Dao, T. D., Ohishi, T., & Nagao, T. (2019). Change of electrical properties of rutile- and anatase-TiO₂ films by atomic layer deposited Al₂O₃. In F. Roozeboom, S. De Gendt, J. Dendooven, J. W. Elam, O. van der Straten, C. Liu, G. Sundaram, & A. Illiberi (Eds.), Atomic Layer Deposition Applications 15 (3 ed., pp. 15-21). (ECS Transactions; Vol. 92, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/09203.0015ecst

Change of electrical properties of rutile- and anatase-TiO₂ films by atomic layer deposited Al₂O₃. / Nabatame, Toshihide; Yamamoto, Ippei; Sawada, Tomomi et al.

Atomic Layer Deposition Applications 15. ed. / Fred Roozeboom; Stefan De Gendt; Jolien Dendooven; Jeffrey W. Elam; Oscar van der Straten; Chanyuan Liu; Ganesh Sundaram; Andrea Illiberi. 3. ed. Electrochemical Society Inc., 2019. p. 15-21 (ECS Transactions; Vol. 92, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nabatame, T, Yamamoto, I, Sawada, T, Ohi, A, Dao, TD, Ohishi, T & Nagao, T 2019, Change of electrical properties of rutile- and anatase-TiO₂ films by atomic layer deposited Al₂O₃. in F Roozeboom, S De Gendt, J Dendooven, JW Elam, O van der Straten, C Liu, G Sundaram & A Illiberi (eds), Atomic Layer Deposition Applications 15. 3 edn, ECS Transactions, no. 3, vol. 92, Electrochemical Society Inc., pp. 15-21, International Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting, Atlanta, United States, 19/10/13. https://doi.org/10.1149/09203.0015ecst

Nabatame T, Yamamoto I, Sawada T, Ohi A, Dao TD, Ohishi T et al. Change of electrical properties of rutile- and anatase-TiO₂ films by atomic layer deposited Al₂O₃. In Roozeboom F, De Gendt S, Dendooven J, Elam JW, van der Straten O, Liu C, Sundaram G, Illiberi A, editors, Atomic Layer Deposition Applications 15. 3 ed. Electrochemical Society Inc. 2019. p. 15-21. (ECS Transactions; 3). doi: 10.1149/09203.0015ecst

Nabatame, Toshihide ; Yamamoto, Ippei ; Sawada, Tomomi et al. / Change of electrical properties of rutile- and anatase-TiO₂ films by atomic layer deposited Al₂O₃. Atomic Layer Deposition Applications 15. editor / Fred Roozeboom ; Stefan De Gendt ; Jolien Dendooven ; Jeffrey W. Elam ; Oscar van der Straten ; Chanyuan Liu ; Ganesh Sundaram ; Andrea Illiberi. 3. ed. Electrochemical Society Inc., 2019. pp. 15-21 (ECS Transactions; 3).

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abstract = "The electrical characteristics of rutile- and anatase-type TiO2 films were investigated by supplying alternatively pulses of trimethylaluminum (TMA) and H2O vapours after AI2O3 deposition using atomic layer deposition (ALD). As-grown rutile- and anatase-TiO2 films had an insulative property of ∼105ωcm, but its resistivity dropped dramatically to 10-1-10-2 ωcm and stayed low after supplying 5 cycles for ALD of AI2O3. The carrier density values of both TiO2 films were 1019-1020 cm-3 in the low-resistivity region. The Hall mobility values were 0.5-15 cm2V-1s-1, which correspond well with the literature values of 0.2-6 and 10 cm2V-1s-1 for thin-film and single-crystal anatase-TiO2, respectively. We propose one mechanism that oxygen vacancies must be formed by the reaction of adsorbed TMA precursor and the oxygen in TiO2 film after ALD-AI2O3 deposition and leads to electron generation, and results in change of resistivity from an insulative into a semiconductor characteristic.",

author = "Toshihide Nabatame and Ippei Yamamoto and Tomomi Sawada and Akihiko Ohi and Dao, {Thang Duy} and Tomoji Ohishi and Tadaaki Nagao",

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AU - Ohishi, Tomoji

AU - Nagao, Tadaaki

N1 - Funding Information: This study was supported by the World Premier International Research Center Initiative (WPI) and the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan, and partly supported by the CREST "Phase Interface Science for Highly Efficient Energy Utilization" (JPMJCR13C3), Japan Science and Technology Agency (JST). The authors thank all staff members of the Nanofabrication group of the National Institute for Materials Science (N1MS) for their support. Publisher Copyright: © The Electrochemical Society.

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N2 - The electrical characteristics of rutile- and anatase-type TiO2 films were investigated by supplying alternatively pulses of trimethylaluminum (TMA) and H2O vapours after AI2O3 deposition using atomic layer deposition (ALD). As-grown rutile- and anatase-TiO2 films had an insulative property of ∼105ωcm, but its resistivity dropped dramatically to 10-1-10-2 ωcm and stayed low after supplying 5 cycles for ALD of AI2O3. The carrier density values of both TiO2 films were 1019-1020 cm-3 in the low-resistivity region. The Hall mobility values were 0.5-15 cm2V-1s-1, which correspond well with the literature values of 0.2-6 and 10 cm2V-1s-1 for thin-film and single-crystal anatase-TiO2, respectively. We propose one mechanism that oxygen vacancies must be formed by the reaction of adsorbed TMA precursor and the oxygen in TiO2 film after ALD-AI2O3 deposition and leads to electron generation, and results in change of resistivity from an insulative into a semiconductor characteristic.

AB - The electrical characteristics of rutile- and anatase-type TiO2 films were investigated by supplying alternatively pulses of trimethylaluminum (TMA) and H2O vapours after AI2O3 deposition using atomic layer deposition (ALD). As-grown rutile- and anatase-TiO2 films had an insulative property of ∼105ωcm, but its resistivity dropped dramatically to 10-1-10-2 ωcm and stayed low after supplying 5 cycles for ALD of AI2O3. The carrier density values of both TiO2 films were 1019-1020 cm-3 in the low-resistivity region. The Hall mobility values were 0.5-15 cm2V-1s-1, which correspond well with the literature values of 0.2-6 and 10 cm2V-1s-1 for thin-film and single-crystal anatase-TiO2, respectively. We propose one mechanism that oxygen vacancies must be formed by the reaction of adsorbed TMA precursor and the oxygen in TiO2 film after ALD-AI2O3 deposition and leads to electron generation, and results in change of resistivity from an insulative into a semiconductor characteristic.

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