Abstract
The electrical characteristics of rutile- and anatase-type TiO2 films were investigated by supplying alternatively pulses of trimethylaluminum (TMA) and H2O vapours after AI2O3 deposition using atomic layer deposition (ALD). As-grown rutile- and anatase-TiO2 films had an insulative property of ∼105ωcm, but its resistivity dropped dramatically to 10-1-10-2 ωcm and stayed low after supplying 5 cycles for ALD of AI2O3. The carrier density values of both TiO2 films were 1019-1020 cm-3 in the low-resistivity region. The Hall mobility values were 0.5-15 cm2V-1s-1, which correspond well with the literature values of 0.2-6 and 10 cm2V-1s-1 for thin-film and single-crystal anatase-TiO2, respectively. We propose one mechanism that oxygen vacancies must be formed by the reaction of adsorbed TMA precursor and the oxygen in TiO2 film after ALD-AI2O3 deposition and leads to electron generation, and results in change of resistivity from an insulative into a semiconductor characteristic.
| Original language | English |
|---|---|
| Title of host publication | Atomic Layer Deposition Applications 15 |
| Editors | Fred Roozeboom, Stefan De Gendt, Jolien Dendooven, Jeffrey W. Elam, Oscar van der Straten, Chanyuan Liu, Ganesh Sundaram, Andrea Illiberi |
| Publisher | Electrochemical Society Inc. |
| Pages | 15-21 |
| Number of pages | 7 |
| Edition | 3 |
| ISBN (Electronic) | 9781607685395 |
| DOIs | |
| Publication status | Published - 2019 Jan 1 |
| Event | International Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting - Atlanta, United States Duration: 2019 Oct 13 → 2019 Oct 17 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 3 |
| Volume | 92 |
| ISSN (Print) | 1938-6737 |
| ISSN (Electronic) | 1938-5862 |
Conference
| Conference | International Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting |
|---|---|
| Country | United States |
| City | Atlanta |
| Period | 19/10/13 → 19/10/17 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Change of electrical properties of rutile- and anatase-TiO2 films by atomic layer deposited Al2O3. / Nabatame, Toshihide; Yamamoto, Ippei; Sawada, Tomomi; Ohi, Akihiko; Dao, Thang Duy; Ohishi, Tomoji; Nagao, Tadaaki.
Atomic Layer Deposition Applications 15. ed. / Fred Roozeboom; Stefan De Gendt; Jolien Dendooven; Jeffrey W. Elam; Oscar van der Straten; Chanyuan Liu; Ganesh Sundaram; Andrea Illiberi. 3. ed. Electrochemical Society Inc., 2019. p. 15-21 (ECS Transactions; Vol. 92, No. 3).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Change of electrical properties of rutile- and anatase-TiO2 films by atomic layer deposited Al2O3
AU - Nabatame, Toshihide
AU - Yamamoto, Ippei
AU - Sawada, Tomomi
AU - Ohi, Akihiko
AU - Dao, Thang Duy
AU - Ohishi, Tomoji
AU - Nagao, Tadaaki
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The electrical characteristics of rutile- and anatase-type TiO2 films were investigated by supplying alternatively pulses of trimethylaluminum (TMA) and H2O vapours after AI2O3 deposition using atomic layer deposition (ALD). As-grown rutile- and anatase-TiO2 films had an insulative property of ∼105ωcm, but its resistivity dropped dramatically to 10-1-10-2 ωcm and stayed low after supplying 5 cycles for ALD of AI2O3. The carrier density values of both TiO2 films were 1019-1020 cm-3 in the low-resistivity region. The Hall mobility values were 0.5-15 cm2V-1s-1, which correspond well with the literature values of 0.2-6 and 10 cm2V-1s-1 for thin-film and single-crystal anatase-TiO2, respectively. We propose one mechanism that oxygen vacancies must be formed by the reaction of adsorbed TMA precursor and the oxygen in TiO2 film after ALD-AI2O3 deposition and leads to electron generation, and results in change of resistivity from an insulative into a semiconductor characteristic.
AB - The electrical characteristics of rutile- and anatase-type TiO2 films were investigated by supplying alternatively pulses of trimethylaluminum (TMA) and H2O vapours after AI2O3 deposition using atomic layer deposition (ALD). As-grown rutile- and anatase-TiO2 films had an insulative property of ∼105ωcm, but its resistivity dropped dramatically to 10-1-10-2 ωcm and stayed low after supplying 5 cycles for ALD of AI2O3. The carrier density values of both TiO2 films were 1019-1020 cm-3 in the low-resistivity region. The Hall mobility values were 0.5-15 cm2V-1s-1, which correspond well with the literature values of 0.2-6 and 10 cm2V-1s-1 for thin-film and single-crystal anatase-TiO2, respectively. We propose one mechanism that oxygen vacancies must be formed by the reaction of adsorbed TMA precursor and the oxygen in TiO2 film after ALD-AI2O3 deposition and leads to electron generation, and results in change of resistivity from an insulative into a semiconductor characteristic.
UR - http://www.scopus.com/inward/record.url?scp=85077217572&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85077217572&partnerID=8YFLogxK
U2 - 10.1149/09203.0015ecst
DO - 10.1149/09203.0015ecst
M3 - Conference contribution
AN - SCOPUS:85077217572
T3 - ECS Transactions
SP - 15
EP - 21
BT - Atomic Layer Deposition Applications 15
A2 - Roozeboom, Fred
A2 - De Gendt, Stefan
A2 - Dendooven, Jolien
A2 - Elam, Jeffrey W.
A2 - van der Straten, Oscar
A2 - Liu, Chanyuan
A2 - Sundaram, Ganesh
A2 - Illiberi, Andrea
PB - Electrochemical Society Inc.
ER -