Changes in effective work function of HfxRu1-x alloy gate electrode

T. Nabatame, Y. Nunoshige, M. Kadoshima, H. Takaba, K. Segawa, S. Kimura, H. Satake, H. Ota, Tomoji Ohishi, A. Toriumi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Effective work function (φ{symbol}m,eff) values of Hfx Ru1-x alloy gate electrodes on SiO2 metal-oxide-semiconductor (MOS) capacitors were carefully examined to assess whether the φ{symbol}m,eff was determined by the crystalline structure or the composition of the HfxRu1-x alloy. X-ray diffraction results indicated that the crystalline structures of HfxRu1-x alloy were divided into hexagonal-Ru, cubic-HfRu or hexagonal-Hf with the increase of Hf content. The φ{symbol}m,eff values could be controlled continuously from 4.6 to 4.0 eV by changing the Hf content. The experimental φ{symbol}m,eff value showed a good agreement with theoretical results considering the compositional ratio of pure Hf and Ru. These results suggest that the φ{symbol}m,eff of HfxRu1-x alloy gates on SiO2 MOS capacitors is dominantly determined by the HfxRu1-x composition rather than the crystalline structure.

Original languageEnglish
Pages (from-to)1524-1528
Number of pages5
JournalMicroelectronic Engineering
Volume85
Issue number7
DOIs
Publication statusPublished - 2008 Jul

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Electrodes
electrodes
Crystalline materials
Capacitors
metal oxide semiconductors
Metals
capacitors
Chemical analysis
X ray diffraction
diffraction
x rays
Oxide semiconductors

Keywords

  • Cubic-HfRu
  • Effective work function
  • Hexagonal-Hf
  • Hexagonal-Ru
  • HfRu alloy
  • MOS capacitor

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Nabatame, T., Nunoshige, Y., Kadoshima, M., Takaba, H., Segawa, K., Kimura, S., ... Toriumi, A. (2008). Changes in effective work function of HfxRu1-x alloy gate electrode. Microelectronic Engineering, 85(7), 1524-1528. https://doi.org/10.1016/j.mee.2008.02.008

Changes in effective work function of HfxRu1-x alloy gate electrode. / Nabatame, T.; Nunoshige, Y.; Kadoshima, M.; Takaba, H.; Segawa, K.; Kimura, S.; Satake, H.; Ota, H.; Ohishi, Tomoji; Toriumi, A.

In: Microelectronic Engineering, Vol. 85, No. 7, 07.2008, p. 1524-1528.

Research output: Contribution to journalArticle

Nabatame, T, Nunoshige, Y, Kadoshima, M, Takaba, H, Segawa, K, Kimura, S, Satake, H, Ota, H, Ohishi, T & Toriumi, A 2008, 'Changes in effective work function of HfxRu1-x alloy gate electrode', Microelectronic Engineering, vol. 85, no. 7, pp. 1524-1528. https://doi.org/10.1016/j.mee.2008.02.008
Nabatame T, Nunoshige Y, Kadoshima M, Takaba H, Segawa K, Kimura S et al. Changes in effective work function of HfxRu1-x alloy gate electrode. Microelectronic Engineering. 2008 Jul;85(7):1524-1528. https://doi.org/10.1016/j.mee.2008.02.008
Nabatame, T. ; Nunoshige, Y. ; Kadoshima, M. ; Takaba, H. ; Segawa, K. ; Kimura, S. ; Satake, H. ; Ota, H. ; Ohishi, Tomoji ; Toriumi, A. / Changes in effective work function of HfxRu1-x alloy gate electrode. In: Microelectronic Engineering. 2008 ; Vol. 85, No. 7. pp. 1524-1528.
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