Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode

T.Nabatame T.Nabatame, Y.Nunoshige Y.Nunoshige, M.Kadoshima M.Kadoshima, H.Takaba H.Takaba, K.Segawa K.Segawa, S.Kimura S.Kimura, H.Satake H.Satake, H.Ota H.Ota, T.Ohishi T.Ohishi, A.Toriumi A.Toriumi, Tomoji Oishi

Research output: Contribution to journalArticle

Original languageEnglish
JournalMicroelectronics Engineering
Publication statusPublished - 2008 Mar 28

Cite this

T.Nabatame, T. N., Y.Nunoshige, Y. N., M.Kadoshima, M. K., H.Takaba, H. T., K.Segawa, K. S., S.Kimura, S. K., ... Oishi, T. (2008). Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode. Microelectronics Engineering.

Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode. / T.Nabatame, T.Nabatame; Y.Nunoshige, Y.Nunoshige; M.Kadoshima, M.Kadoshima; H.Takaba, H.Takaba; K.Segawa, K.Segawa; S.Kimura, S.Kimura; H.Satake, H.Satake; H.Ota, H.Ota; T.Ohishi, T.Ohishi; A.Toriumi, A.Toriumi; Oishi, Tomoji.

In: Microelectronics Engineering, 28.03.2008.

Research output: Contribution to journalArticle

T.Nabatame, TN, Y.Nunoshige, YN, M.Kadoshima, MK, H.Takaba, HT, K.Segawa, KS, S.Kimura, SK, H.Satake, HS, H.Ota, HO, T.Ohishi, TO, A.Toriumi, AT & Oishi, T 2008, 'Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode', Microelectronics Engineering.
T.Nabatame TN, Y.Nunoshige YN, M.Kadoshima MK, H.Takaba HT, K.Segawa KS, S.Kimura SK et al. Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode. Microelectronics Engineering. 2008 Mar 28.
T.Nabatame, T.Nabatame ; Y.Nunoshige, Y.Nunoshige ; M.Kadoshima, M.Kadoshima ; H.Takaba, H.Takaba ; K.Segawa, K.Segawa ; S.Kimura, S.Kimura ; H.Satake, H.Satake ; H.Ota, H.Ota ; T.Ohishi, T.Ohishi ; A.Toriumi, A.Toriumi ; Oishi, Tomoji. / Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode. In: Microelectronics Engineering. 2008.
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