Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode

T.Nabatame T.Nabatame; Y.Nunoshige Y.Nunoshige; M.Kadoshima M.Kadoshima; H.Takaba H.Takaba; K.Segawa K.Segawa; S.Kimura S.Kimura; H.Satake H.Satake; H.Ota H.Ota; T.Ohishi T.Ohishi; A.Toriumi A.Toriumi; Tomoji Oishi

Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode

T.Nabatame T.Nabatame, Y.Nunoshige Y.Nunoshige, M.Kadoshima M.Kadoshima, H.Takaba H.Takaba, K.Segawa K.Segawa, S.Kimura S.Kimura, H.Satake H.Satake, H.Ota H.Ota, T.Ohishi T.Ohishi, A.Toriumi A.Toriumi, Tomoji Oishi

Regional Environment Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Microelectronics Engineering
Publication status	Published - 2008 Mar 28

Cite this

Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode. / T.Nabatame, T.Nabatame; Y.Nunoshige, Y.Nunoshige; M.Kadoshima, M.Kadoshima; H.Takaba, H.Takaba; K.Segawa, K.Segawa; S.Kimura, S.Kimura; H.Satake, H.Satake; H.Ota, H.Ota; T.Ohishi, T.Ohishi; A.Toriumi, A.Toriumi; Oishi, Tomoji.

In: Microelectronics Engineering, 28.03.2008.

Research output: Contribution to journal › Article › peer-review

@article{0792d9c636dd4a89bc0f0f727d02e19a,

title = "Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode",

author = "T.Nabatame T.Nabatame and Y.Nunoshige Y.Nunoshige and M.Kadoshima M.Kadoshima and H.Takaba H.Takaba and K.Segawa K.Segawa and S.Kimura S.Kimura and H.Satake H.Satake and H.Ota H.Ota and T.Ohishi T.Ohishi and A.Toriumi A.Toriumi and Tomoji Oishi",

year = "2008",

month = mar,

day = "28",

language = "English",

journal = "Microelectronics Engineering",

}

TY - JOUR

T1 - Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode

AU - T.Nabatame, T.Nabatame

AU - Y.Nunoshige, Y.Nunoshige

AU - M.Kadoshima, M.Kadoshima

AU - H.Takaba, H.Takaba

AU - K.Segawa, K.Segawa

AU - S.Kimura, S.Kimura

AU - H.Satake, H.Satake

AU - H.Ota, H.Ota

AU - T.Ohishi, T.Ohishi

AU - A.Toriumi, A.Toriumi

AU - Oishi, Tomoji

PY - 2008/3/28

Y1 - 2008/3/28

M3 - Article

JO - Microelectronics Engineering

JF - Microelectronics Engineering

ER -