Characteristics of a GaN metal semiconductor field-effect transistor grown on a sapphire substrate by metalorganic chemical vapor deposition

Takashi Egawa, Kouichi Nakamura, Hiroyasu Ishikawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Electron mobilities of an n-GaN layer on a sapphire substrate grown by metalorganic chemical vapor deposition were 585 and 1217 cm2/V·s with electron carrier concentrations of 1.1 × 1017 and 2.4 × 1016 cm-3 at 300 and 77 K, respectively. A high current level of 281 mA/mm and a large transconductance (gm) of 33 mS/mm have been achieved for a GaN metal semiconductor field-effect transistor (MESFET) with a gate length of 2 μm and a width of 200 μm at 25°C. The GaN MESFET at high temperature showed degraded characteristics: low gm, gate leakage and poor pinch-off. However, the GaN MESFET at 25°C, measured again after measurement at 400°C, showed the initial characteristic in spite of gate leakage. The GaN MESFET exhibited the sidegating effect, which was thought to be caused by the deep level in the undoped GaN layer beneath the channel layer. The uniformity of the sheet resistance seems to be insensitive to the high dislocation density in the GaN layer.

Original languageEnglish
Pages (from-to)2630-2633
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number4 B
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

MESFET devices
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
sapphire
field effect transistors
Substrates
metals
leakage
Electron mobility
Sheet resistance
Transconductance
transconductance
electron mobility
Carrier concentration
high current
Electrons
electrons
Temperature

Keywords

  • Deep level
  • GaN
  • MESFET
  • MOCVD
  • Schottky diode
  • Sidegating effect

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{aefbf4668bce42c99ed712ab36799bcb,
title = "Characteristics of a GaN metal semiconductor field-effect transistor grown on a sapphire substrate by metalorganic chemical vapor deposition",
abstract = "Electron mobilities of an n-GaN layer on a sapphire substrate grown by metalorganic chemical vapor deposition were 585 and 1217 cm2/V·s with electron carrier concentrations of 1.1 × 1017 and 2.4 × 1016 cm-3 at 300 and 77 K, respectively. A high current level of 281 mA/mm and a large transconductance (gm) of 33 mS/mm have been achieved for a GaN metal semiconductor field-effect transistor (MESFET) with a gate length of 2 μm and a width of 200 μm at 25°C. The GaN MESFET at high temperature showed degraded characteristics: low gm, gate leakage and poor pinch-off. However, the GaN MESFET at 25°C, measured again after measurement at 400°C, showed the initial characteristic in spite of gate leakage. The GaN MESFET exhibited the sidegating effect, which was thought to be caused by the deep level in the undoped GaN layer beneath the channel layer. The uniformity of the sheet resistance seems to be insensitive to the high dislocation density in the GaN layer.",
keywords = "Deep level, GaN, MESFET, MOCVD, Schottky diode, Sidegating effect",
author = "Takashi Egawa and Kouichi Nakamura and Hiroyasu Ishikawa and Takashi Jimbo and Masayoshi Umeno",
year = "1999",
language = "English",
volume = "38",
pages = "2630--2633",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 B",

}

TY - JOUR

T1 - Characteristics of a GaN metal semiconductor field-effect transistor grown on a sapphire substrate by metalorganic chemical vapor deposition

AU - Egawa, Takashi

AU - Nakamura, Kouichi

AU - Ishikawa, Hiroyasu

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

PY - 1999

Y1 - 1999

N2 - Electron mobilities of an n-GaN layer on a sapphire substrate grown by metalorganic chemical vapor deposition were 585 and 1217 cm2/V·s with electron carrier concentrations of 1.1 × 1017 and 2.4 × 1016 cm-3 at 300 and 77 K, respectively. A high current level of 281 mA/mm and a large transconductance (gm) of 33 mS/mm have been achieved for a GaN metal semiconductor field-effect transistor (MESFET) with a gate length of 2 μm and a width of 200 μm at 25°C. The GaN MESFET at high temperature showed degraded characteristics: low gm, gate leakage and poor pinch-off. However, the GaN MESFET at 25°C, measured again after measurement at 400°C, showed the initial characteristic in spite of gate leakage. The GaN MESFET exhibited the sidegating effect, which was thought to be caused by the deep level in the undoped GaN layer beneath the channel layer. The uniformity of the sheet resistance seems to be insensitive to the high dislocation density in the GaN layer.

AB - Electron mobilities of an n-GaN layer on a sapphire substrate grown by metalorganic chemical vapor deposition were 585 and 1217 cm2/V·s with electron carrier concentrations of 1.1 × 1017 and 2.4 × 1016 cm-3 at 300 and 77 K, respectively. A high current level of 281 mA/mm and a large transconductance (gm) of 33 mS/mm have been achieved for a GaN metal semiconductor field-effect transistor (MESFET) with a gate length of 2 μm and a width of 200 μm at 25°C. The GaN MESFET at high temperature showed degraded characteristics: low gm, gate leakage and poor pinch-off. However, the GaN MESFET at 25°C, measured again after measurement at 400°C, showed the initial characteristic in spite of gate leakage. The GaN MESFET exhibited the sidegating effect, which was thought to be caused by the deep level in the undoped GaN layer beneath the channel layer. The uniformity of the sheet resistance seems to be insensitive to the high dislocation density in the GaN layer.

KW - Deep level

KW - GaN

KW - MESFET

KW - MOCVD

KW - Schottky diode

KW - Sidegating effect

UR - http://www.scopus.com/inward/record.url?scp=0000656496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000656496&partnerID=8YFLogxK

M3 - Article

VL - 38

SP - 2630

EP - 2633

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -