Original language | English |
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Pages (from-to) | 2630-2633 |
Journal | Default journal |
Volume | 38 |
Publication status | Published - 1999 Apr 1 |
Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
T. Egawa, K. Nakamura, H. Ishikawa, T. Jimbo, M. Umeno
Research output: Contribution to journal › Article › peer-review
13
Citations
(Scopus)