Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

T. Egawa, K. Nakamura, H. Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

13 Citations (Scopus)
Original languageEnglish
Pages (from-to)2630-2633
JournalDefault journal
Volume38
Publication statusPublished - 1999 Apr 1

Cite this

Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition. / Egawa, T.; Nakamura, K.; Ishikawa, H.; Jimbo, T.; Umeno, M.

In: Default journal, Vol. 38, 01.04.1999, p. 2630-2633.

Research output: Contribution to journalArticle

@article{61d38156814943a58c7ce01c998c0c63,
title = "Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition",
author = "T. Egawa and K. Nakamura and H. Ishikawa and T. Jimbo and M. Umeno",
year = "1999",
month = "4",
day = "1",
language = "English",
volume = "38",
pages = "2630--2633",
journal = "Default journal",

}

TY - JOUR

T1 - Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

AU - Egawa, T.

AU - Nakamura, K.

AU - Ishikawa, H.

AU - Jimbo, T.

AU - Umeno, M.

PY - 1999/4/1

Y1 - 1999/4/1

M3 - Article

VL - 38

SP - 2630

EP - 2633

JO - Default journal

JF - Default journal

ER -