| Original language | English |
|---|---|
| Pages (from-to) | 2630-2633 |
| Journal | Default journal |
| Volume | 38 |
| Publication status | Published - 1999 Apr 1 |
Cite this
Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T., & Umeno, M. (1999). Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition. Default journal, 38, 2630-2633.