| Original language | English |
|---|---|
| Pages (from-to) | 2630-2633 |
| Journal | Default journal |
| Volume | 38 |
| Publication status | Published - 1999 Apr 1 |
Cite this
Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T., & Umeno, M. (1999). Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition. Default journal, 38, 2630-2633.
Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition. / Egawa, T.; Nakamura, K.; Ishikawa, H.; Jimbo, T.; Umeno, M.
In: Default journal, Vol. 38, 01.04.1999, p. 2630-2633.Research output: Contribution to journal › Article
Egawa, T, Nakamura, K, Ishikawa, H, Jimbo, T & Umeno, M 1999, 'Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition', Default journal, vol. 38, pp. 2630-2633.
Egawa T, Nakamura K, Ishikawa H, Jimbo T, Umeno M. Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition. Default journal. 1999 Apr 1;38:2630-2633.
@article{61d38156814943a58c7ce01c998c0c63,
title = "Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition",
author = "T. Egawa and K. Nakamura and H. Ishikawa and T. Jimbo and M. Umeno",
year = "1999",
month = "4",
day = "1",
language = "English",
volume = "38",
pages = "2630--2633",
journal = "Default journal",
}
TY - JOUR
T1 - Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
AU - Egawa, T.
AU - Nakamura, K.
AU - Ishikawa, H.
AU - Jimbo, T.
AU - Umeno, M.
PY - 1999/4/1
Y1 - 1999/4/1
M3 - Article
VL - 38
SP - 2630
EP - 2633
JO - Default journal
JF - Default journal
ER -