Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

T. Egawa, K. Nakamura, H. Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

13 Citations (Scopus)
Original languageEnglish
Pages (from-to)2630-2633
JournalDefault journal
Volume38
Publication statusPublished - 1999 Apr 1

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