Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

T. Egawa; K. Nakamura; H. Ishikawa; T. Jimbo; M. Umeno

Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

T. Egawa, K. Nakamura, H. Ishikawa, T. Jimbo, M. Umeno

Functional Control Systems

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	2630-2633
Journal	Default journal
Volume	38
Publication status	Published - 1999 Apr 1

Cite this

Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T., & Umeno, M. (1999). Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition. Default journal, 38, 2630-2633.

@article{61d38156814943a58c7ce01c998c0c63,

title = "Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition",

author = "T. Egawa and K. Nakamura and H. Ishikawa and T. Jimbo and M. Umeno",

year = "1999",

month = apr,

day = "1",

language = "English",

volume = "38",

pages = "2630--2633",

journal = "Default journal",

}