Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes

M. Nakaji, T. Egawa, H. Ishikawa, S. Arulkumaran, T. Jimbo

Research output: Contribution to journalArticle

14 Citations (Scopus)
Original languageEnglish
Pages (from-to)L493-495
JournalDefault journal
Volume41
Publication statusPublished - 2002 Apr 1

Cite this

Nakaji, M., Egawa, T., Ishikawa, H., Arulkumaran, S., & Jimbo, T. (2002). Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes. Default journal, 41, L493-495.