Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes

M. Nakaji, T. Egawa, H. Ishikawa, S. Arulkumaran, T. Jimbo

Research output: Contribution to journalArticle

12 Citations (Scopus)
Original languageEnglish
Pages (from-to)L493-495
JournalDefault journal
Volume41
Publication statusPublished - 2002 Apr 1

Cite this

Nakaji, M., Egawa, T., Ishikawa, H., Arulkumaran, S., & Jimbo, T. (2002). Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes. Default journal, 41, L493-495.

Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes. / Nakaji, M.; Egawa, T.; Ishikawa, H.; Arulkumaran, S.; Jimbo, T.

In: Default journal, Vol. 41, 01.04.2002, p. L493-495.

Research output: Contribution to journalArticle

Nakaji, M, Egawa, T, Ishikawa, H, Arulkumaran, S & Jimbo, T 2002, 'Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes', Default journal, vol. 41, pp. L493-495.
Nakaji M, Egawa T, Ishikawa H, Arulkumaran S, Jimbo T. Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes. Default journal. 2002 Apr 1;41:L493-495.
Nakaji, M. ; Egawa, T. ; Ishikawa, H. ; Arulkumaran, S. ; Jimbo, T. / Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes. In: Default journal. 2002 ; Vol. 41. pp. L493-495.
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