Characteristics of BCl3 plasma-etched GaN Schottky diodes

Masaharu Nakaji; Takashi Egawa; Hiroyasu Ishikawa; Subramanian Arulkumaran; Takashi Jimbo

doi:10.1143/jjap.41.l493

Characteristics of BCl₃ plasma-etched GaN Schottky diodes

Masaharu Nakaji, Takashi Egawa, Hiroyasu Ishikawa, Subramanian Arulkumaran, Takashi Jimbo

Research output: Contribution to journal › Letter › peer-review

21 Citations (Scopus)

Abstract

Schottky diode characteristics of a boron trichloride (BCl₃) plasma-etched n-GaN layer by reactive ion etching (RIE) were investigated using current-voltage measurements. BCl₃ plasma etching degraded the Schottky diode characteristics due to plasma-induced damage and a discharge-gas-related residue near the surface of the GaN layer. To remove the residue and plasma damage from the GaN layer, various surface treatments were carried out on the BCl₃ plasma-etched GaN layer. Improved Schottky characteristics were observed in nitrogen plasma-treated n-GaN Schottky diodes. X-ray photoelectron spectroscopy confirmed the removal of the discharge-gas-related residue.

Original language	English
Pages (from-to)	L493-L495
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	4
DOIs	https://doi.org/10.1143/jjap.41.l493
Publication status	Published - 2002 Apr 15
Externally published	Yes

Keywords

GaN
Plasma damage
RIE
Schottky diode
XPS

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.41.l493

Cite this

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title = "Characteristics of BCl3 plasma-etched GaN Schottky diodes",

abstract = "Schottky diode characteristics of a boron trichloride (BCl3) plasma-etched n-GaN layer by reactive ion etching (RIE) were investigated using current-voltage measurements. BCl3 plasma etching degraded the Schottky diode characteristics due to plasma-induced damage and a discharge-gas-related residue near the surface of the GaN layer. To remove the residue and plasma damage from the GaN layer, various surface treatments were carried out on the BCl3 plasma-etched GaN layer. Improved Schottky characteristics were observed in nitrogen plasma-treated n-GaN Schottky diodes. X-ray photoelectron spectroscopy confirmed the removal of the discharge-gas-related residue.",

keywords = "GaN, Plasma damage, RIE, Schottky diode, XPS",

author = "Masaharu Nakaji and Takashi Egawa and Hiroyasu Ishikawa and Subramanian Arulkumaran and Takashi Jimbo",

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T1 - Characteristics of BCl3 plasma-etched GaN Schottky diodes

AU - Nakaji, Masaharu

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

AU - Arulkumaran, Subramanian

AU - Jimbo, Takashi

PY - 2002/4/15

Y1 - 2002/4/15

N2 - Schottky diode characteristics of a boron trichloride (BCl3) plasma-etched n-GaN layer by reactive ion etching (RIE) were investigated using current-voltage measurements. BCl3 plasma etching degraded the Schottky diode characteristics due to plasma-induced damage and a discharge-gas-related residue near the surface of the GaN layer. To remove the residue and plasma damage from the GaN layer, various surface treatments were carried out on the BCl3 plasma-etched GaN layer. Improved Schottky characteristics were observed in nitrogen plasma-treated n-GaN Schottky diodes. X-ray photoelectron spectroscopy confirmed the removal of the discharge-gas-related residue.

AB - Schottky diode characteristics of a boron trichloride (BCl3) plasma-etched n-GaN layer by reactive ion etching (RIE) were investigated using current-voltage measurements. BCl3 plasma etching degraded the Schottky diode characteristics due to plasma-induced damage and a discharge-gas-related residue near the surface of the GaN layer. To remove the residue and plasma damage from the GaN layer, various surface treatments were carried out on the BCl3 plasma-etched GaN layer. Improved Schottky characteristics were observed in nitrogen plasma-treated n-GaN Schottky diodes. X-ray photoelectron spectroscopy confirmed the removal of the discharge-gas-related residue.

KW - GaN

KW - Plasma damage

KW - RIE

KW - Schottky diode

KW - XPS

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