Characteristics of BCl3 plasma-etched GaN Schottky diodes

Masaharu Nakaji, Takashi Egawa, Hiroyasu Ishikawa, Subramanian Arulkumaran, Takashi Jimbo

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Schottky diode characteristics of a boron trichloride (BCl3) plasma-etched n-GaN layer by reactive ion etching (RIE) were investigated using current-voltage measurements. BCl3 plasma etching degraded the Schottky diode characteristics due to plasma-induced damage and a discharge-gas-related residue near the surface of the GaN layer. To remove the residue and plasma damage from the GaN layer, various surface treatments were carried out on the BCl3 plasma-etched GaN layer. Improved Schottky characteristics were observed in nitrogen plasma-treated n-GaN Schottky diodes. X-ray photoelectron spectroscopy confirmed the removal of the discharge-gas-related residue.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number4
Publication statusPublished - 2002 Apr 15
Externally publishedYes

Fingerprint

Schottky diodes
Diodes
Plasmas
gas discharges
Discharge (fluid mechanics)
damage
Nitrogen plasma
nitrogen plasma
Plasma etching
Voltage measurement
Reactive ion etching
Electric current measurement
plasma etching
surface treatment
Gases
electrical measurement
Boron
Surface treatment
boron
X ray photoelectron spectroscopy

Keywords

  • GaN
  • Plasma damage
  • RIE
  • Schottky diode
  • XPS

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Characteristics of BCl3 plasma-etched GaN Schottky diodes. / Nakaji, Masaharu; Egawa, Takashi; Ishikawa, Hiroyasu; Arulkumaran, Subramanian; Jimbo, Takashi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 41, No. 4, 15.04.2002.

Research output: Contribution to journalArticle

Nakaji, Masaharu ; Egawa, Takashi ; Ishikawa, Hiroyasu ; Arulkumaran, Subramanian ; Jimbo, Takashi. / Characteristics of BCl3 plasma-etched GaN Schottky diodes. In: Japanese Journal of Applied Physics, Part 2: Letters. 2002 ; Vol. 41, No. 4.
@article{f5ef07e9517446c29e97ee109e10fe47,
title = "Characteristics of BCl3 plasma-etched GaN Schottky diodes",
abstract = "Schottky diode characteristics of a boron trichloride (BCl3) plasma-etched n-GaN layer by reactive ion etching (RIE) were investigated using current-voltage measurements. BCl3 plasma etching degraded the Schottky diode characteristics due to plasma-induced damage and a discharge-gas-related residue near the surface of the GaN layer. To remove the residue and plasma damage from the GaN layer, various surface treatments were carried out on the BCl3 plasma-etched GaN layer. Improved Schottky characteristics were observed in nitrogen plasma-treated n-GaN Schottky diodes. X-ray photoelectron spectroscopy confirmed the removal of the discharge-gas-related residue.",
keywords = "GaN, Plasma damage, RIE, Schottky diode, XPS",
author = "Masaharu Nakaji and Takashi Egawa and Hiroyasu Ishikawa and Subramanian Arulkumaran and Takashi Jimbo",
year = "2002",
month = "4",
day = "15",
language = "English",
volume = "41",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4",

}

TY - JOUR

T1 - Characteristics of BCl3 plasma-etched GaN Schottky diodes

AU - Nakaji, Masaharu

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

AU - Arulkumaran, Subramanian

AU - Jimbo, Takashi

PY - 2002/4/15

Y1 - 2002/4/15

N2 - Schottky diode characteristics of a boron trichloride (BCl3) plasma-etched n-GaN layer by reactive ion etching (RIE) were investigated using current-voltage measurements. BCl3 plasma etching degraded the Schottky diode characteristics due to plasma-induced damage and a discharge-gas-related residue near the surface of the GaN layer. To remove the residue and plasma damage from the GaN layer, various surface treatments were carried out on the BCl3 plasma-etched GaN layer. Improved Schottky characteristics were observed in nitrogen plasma-treated n-GaN Schottky diodes. X-ray photoelectron spectroscopy confirmed the removal of the discharge-gas-related residue.

AB - Schottky diode characteristics of a boron trichloride (BCl3) plasma-etched n-GaN layer by reactive ion etching (RIE) were investigated using current-voltage measurements. BCl3 plasma etching degraded the Schottky diode characteristics due to plasma-induced damage and a discharge-gas-related residue near the surface of the GaN layer. To remove the residue and plasma damage from the GaN layer, various surface treatments were carried out on the BCl3 plasma-etched GaN layer. Improved Schottky characteristics were observed in nitrogen plasma-treated n-GaN Schottky diodes. X-ray photoelectron spectroscopy confirmed the removal of the discharge-gas-related residue.

KW - GaN

KW - Plasma damage

KW - RIE

KW - Schottky diode

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=0037089108&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037089108&partnerID=8YFLogxK

M3 - Article

VL - 41

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4

ER -