Characteristics of BCl3 plasma-etched GaN Schottky diodes

Masaharu Nakaji, Takashi Egawa, Hiroyasu Ishikawa, Subramanian Arulkumaran, Takashi Jimbo

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12 Citations (Scopus)

Abstract

Schottky diode characteristics of a boron trichloride (BCl3) plasma-etched n-GaN layer by reactive ion etching (RIE) were investigated using current-voltage measurements. BCl3 plasma etching degraded the Schottky diode characteristics due to plasma-induced damage and a discharge-gas-related residue near the surface of the GaN layer. To remove the residue and plasma damage from the GaN layer, various surface treatments were carried out on the BCl3 plasma-etched GaN layer. Improved Schottky characteristics were observed in nitrogen plasma-treated n-GaN Schottky diodes. X-ray photoelectron spectroscopy confirmed the removal of the discharge-gas-related residue.

Original languageEnglish
Pages (from-to)L493-L495
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number4
Publication statusPublished - 2002 Apr 15

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Keywords

  • GaN
  • Plasma damage
  • RIE
  • Schottky diode
  • XPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Nakaji, M., Egawa, T., Ishikawa, H., Arulkumaran, S., & Jimbo, T. (2002). Characteristics of BCl3 plasma-etched GaN Schottky diodes. Japanese Journal of Applied Physics, Part 2: Letters, 41(4), L493-L495.