Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD

T. Egawa, K. Nakamura, H. Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)C-10-2
JournalDefault journal
Publication statusPublished - 1998 Sep 1

Cite this

Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T., & Umeno, M. (1998). Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD. Default journal, C-10-2.

Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD. / Egawa, T.; Nakamura, K.; Ishikawa, H.; Jimbo, T.; Umeno, M.

In: Default journal, 01.09.1998, p. C-10-2.

Research output: Contribution to journalArticle

Egawa, T, Nakamura, K, Ishikawa, H, Jimbo, T & Umeno, M 1998, 'Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD', Default journal, pp. C-10-2.
Egawa, T. ; Nakamura, K. ; Ishikawa, H. ; Jimbo, T. ; Umeno, M. / Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD. In: Default journal. 1998 ; pp. C-10-2.
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