Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD

T. Egawa, K. Nakamura, H. Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)C-10-2
JournalDefault journal
Publication statusPublished - 1998 Sep 1

Cite this

Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T., & Umeno, M. (1998). Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD. Default journal, C-10-2.