Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD

T. Egawa, Hiroyasu Ishikawa, K. Yamamoto, T. Jimbo, M. Umeno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith
PublisherMRS
Pages1101-1106
Number of pages6
Volume482
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: 1997 Dec 11997 Dec 4

Other

OtherProceedings of the 1997 MRS Fall Meeting
CityBoston, MA, USA
Period97/12/197/12/4

Fingerprint

Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Diodes
Transconductance
Substrates
Current voltage characteristics
Crystalline materials
Electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Egawa, T., Ishikawa, H., Yamamoto, K., Jimbo, T., & Umeno, M. (1997). Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD. In S. R. Phillpot, P. D. Bristowe, D. G. Stroud, & J. R. Smith (Eds.), Materials Research Society Symposium - Proceedings (Vol. 482, pp. 1101-1106). MRS.

Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD. / Egawa, T.; Ishikawa, Hiroyasu; Yamamoto, K.; Jimbo, T.; Umeno, M.

Materials Research Society Symposium - Proceedings. ed. / S.R. Phillpot; P.D. Bristowe; D.G. Stroud; J.R. Smith. Vol. 482 MRS, 1997. p. 1101-1106.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Egawa, T, Ishikawa, H, Yamamoto, K, Jimbo, T & Umeno, M 1997, Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD. in SR Phillpot, PD Bristowe, DG Stroud & JR Smith (eds), Materials Research Society Symposium - Proceedings. vol. 482, MRS, pp. 1101-1106, Proceedings of the 1997 MRS Fall Meeting, Boston, MA, USA, 97/12/1.
Egawa T, Ishikawa H, Yamamoto K, Jimbo T, Umeno M. Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD. In Phillpot SR, Bristowe PD, Stroud DG, Smith JR, editors, Materials Research Society Symposium - Proceedings. Vol. 482. MRS. 1997. p. 1101-1106
Egawa, T. ; Ishikawa, Hiroyasu ; Yamamoto, K. ; Jimbo, T. ; Umeno, M. / Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD. Materials Research Society Symposium - Proceedings. editor / S.R. Phillpot ; P.D. Bristowe ; D.G. Stroud ; J.R. Smith. Vol. 482 MRS, 1997. pp. 1101-1106
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