Characteristics of several high-k gate insulators for GaN power device

Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Hajime Kiyono, Yoshihiro Irokawa, Koji Shiozaki, Yasuo Koide

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We systematically investigated characteristics of Pt-gated capacitors with four kinds of gate insulators such as Hfo.57Sio.43Ox, Hf0.64Si0.36Ox, HfO2, and Al2O3. The Hf0.64Si0.36Ox films fabricated by post-deposition annealing (PDA) at 800°C in O2 (PDO), N2 (PDN), and 3%H2 (PDH) ambient exhibited quite different characteristics. After PDO, the Hf0.64Si0.36Ox film was partially crystallized and had a thick interfacial layer at the n-GaN/Hf0.64Si0.36Ox interface, while the Hf0.64Si0.36Ox films after PDN and PDH maintained an amorphous structure. The PDH capacitor exhibited an order of magnitude larger interface state density than the PDN capacitor, indicating that the PDN process can produce superior Hf0.64Si0.36Ox film. The Hf0.57Si0.43Ox, Hf0.64Si0.36Ox, HfO2, and Al2O3 films after PDA at 800°C in N2 were 15.4, 15.9, 17.6, and 9, respectively. The HfO2 and Al2O3 films consist of polycrystalline structure while the Hf0.57Si0.43Ox and Hf0.64Si0.36Ox films maintain an amorphous structure. The different structure strongly affected to electrical properties. The Hf0.57Si0.43Ox and Hf0.64Si0.36Ox capacitors showed superior electrical properties such as a minimal flatband voltage (Vfo) hysteresis (≤ +70 mV) and a small Vfo, shift (≤ -0.46 V), as well as a low interface state density (∼ 3 × 1011 cm-2eV-1 at -0.45 eV from conduction band), and a high breakdown electric field (≥ 8.6 MV/cm) compared to those of the HfO2 and Al2O3 capacitors.

Original languageEnglish
Title of host publicationSemiconductor Process Integration 11
EditorsJ. Murota, C. Claeys, H. Iwai, M. Tao, S. Deleonibus, A. Mai, K. Shiojima, Y. Cao
PublisherElectrochemical Society Inc.
Pages109-117
Number of pages9
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2019 Jan 1
Event11th Symposium on Semiconductor Process Integration - 236th ECS Meeting - Atlanta, United States
Duration: 2019 Oct 132019 Oct 17

Publication series

NameECS Transactions
Number4
Volume92
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference11th Symposium on Semiconductor Process Integration - 236th ECS Meeting
CountryUnited States
CityAtlanta
Period19/10/1319/10/17

Fingerprint

Capacitors
Interface states
Electric properties
Annealing
Conduction bands
Hysteresis
Electric fields
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Nabatame, T., Maeda, E., Inoue, M., Hirose, M., Kiyono, H., Irokawa, Y., ... Koide, Y. (2019). Characteristics of several high-k gate insulators for GaN power device. In J. Murota, C. Claeys, H. Iwai, M. Tao, S. Deleonibus, A. Mai, K. Shiojima, ... Y. Cao (Eds.), Semiconductor Process Integration 11 (4 ed., pp. 109-117). (ECS Transactions; Vol. 92, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/09204.0109ecst

Characteristics of several high-k gate insulators for GaN power device. / Nabatame, Toshihide; Maeda, Erika; Inoue, Mari; Hirose, Masafumi; Kiyono, Hajime; Irokawa, Yoshihiro; Shiozaki, Koji; Koide, Yasuo.

Semiconductor Process Integration 11. ed. / J. Murota; C. Claeys; H. Iwai; M. Tao; S. Deleonibus; A. Mai; K. Shiojima; Y. Cao. 4. ed. Electrochemical Society Inc., 2019. p. 109-117 (ECS Transactions; Vol. 92, No. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nabatame, T, Maeda, E, Inoue, M, Hirose, M, Kiyono, H, Irokawa, Y, Shiozaki, K & Koide, Y 2019, Characteristics of several high-k gate insulators for GaN power device. in J Murota, C Claeys, H Iwai, M Tao, S Deleonibus, A Mai, K Shiojima & Y Cao (eds), Semiconductor Process Integration 11. 4 edn, ECS Transactions, no. 4, vol. 92, Electrochemical Society Inc., pp. 109-117, 11th Symposium on Semiconductor Process Integration - 236th ECS Meeting, Atlanta, United States, 19/10/13. https://doi.org/10.1149/09204.0109ecst
Nabatame T, Maeda E, Inoue M, Hirose M, Kiyono H, Irokawa Y et al. Characteristics of several high-k gate insulators for GaN power device. In Murota J, Claeys C, Iwai H, Tao M, Deleonibus S, Mai A, Shiojima K, Cao Y, editors, Semiconductor Process Integration 11. 4 ed. Electrochemical Society Inc. 2019. p. 109-117. (ECS Transactions; 4). https://doi.org/10.1149/09204.0109ecst
Nabatame, Toshihide ; Maeda, Erika ; Inoue, Mari ; Hirose, Masafumi ; Kiyono, Hajime ; Irokawa, Yoshihiro ; Shiozaki, Koji ; Koide, Yasuo. / Characteristics of several high-k gate insulators for GaN power device. Semiconductor Process Integration 11. editor / J. Murota ; C. Claeys ; H. Iwai ; M. Tao ; S. Deleonibus ; A. Mai ; K. Shiojima ; Y. Cao. 4. ed. Electrochemical Society Inc., 2019. pp. 109-117 (ECS Transactions; 4).
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abstract = "We systematically investigated characteristics of Pt-gated capacitors with four kinds of gate insulators such as Hfo.57Sio.43Ox, Hf0.64Si0.36Ox, HfO2, and Al2O3. The Hf0.64Si0.36Ox films fabricated by post-deposition annealing (PDA) at 800°C in O2 (PDO), N2 (PDN), and 3{\%}H2 (PDH) ambient exhibited quite different characteristics. After PDO, the Hf0.64Si0.36Ox film was partially crystallized and had a thick interfacial layer at the n-GaN/Hf0.64Si0.36Ox interface, while the Hf0.64Si0.36Ox films after PDN and PDH maintained an amorphous structure. The PDH capacitor exhibited an order of magnitude larger interface state density than the PDN capacitor, indicating that the PDN process can produce superior Hf0.64Si0.36Ox film. The Hf0.57Si0.43Ox, Hf0.64Si0.36Ox, HfO2, and Al2O3 films after PDA at 800°C in N2 were 15.4, 15.9, 17.6, and 9, respectively. The HfO2 and Al2O3 films consist of polycrystalline structure while the Hf0.57Si0.43Ox and Hf0.64Si0.36Ox films maintain an amorphous structure. The different structure strongly affected to electrical properties. The Hf0.57Si0.43Ox and Hf0.64Si0.36Ox capacitors showed superior electrical properties such as a minimal flatband voltage (Vfo) hysteresis (≤ +70 mV) and a small Vfo, shift (≤ -0.46 V), as well as a low interface state density (∼ 3 × 1011 cm-2eV-1 at -0.45 eV from conduction band), and a high breakdown electric field (≥ 8.6 MV/cm) compared to those of the HfO2 and Al2O3 capacitors.",
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N2 - We systematically investigated characteristics of Pt-gated capacitors with four kinds of gate insulators such as Hfo.57Sio.43Ox, Hf0.64Si0.36Ox, HfO2, and Al2O3. The Hf0.64Si0.36Ox films fabricated by post-deposition annealing (PDA) at 800°C in O2 (PDO), N2 (PDN), and 3%H2 (PDH) ambient exhibited quite different characteristics. After PDO, the Hf0.64Si0.36Ox film was partially crystallized and had a thick interfacial layer at the n-GaN/Hf0.64Si0.36Ox interface, while the Hf0.64Si0.36Ox films after PDN and PDH maintained an amorphous structure. The PDH capacitor exhibited an order of magnitude larger interface state density than the PDN capacitor, indicating that the PDN process can produce superior Hf0.64Si0.36Ox film. The Hf0.57Si0.43Ox, Hf0.64Si0.36Ox, HfO2, and Al2O3 films after PDA at 800°C in N2 were 15.4, 15.9, 17.6, and 9, respectively. The HfO2 and Al2O3 films consist of polycrystalline structure while the Hf0.57Si0.43Ox and Hf0.64Si0.36Ox films maintain an amorphous structure. The different structure strongly affected to electrical properties. The Hf0.57Si0.43Ox and Hf0.64Si0.36Ox capacitors showed superior electrical properties such as a minimal flatband voltage (Vfo) hysteresis (≤ +70 mV) and a small Vfo, shift (≤ -0.46 V), as well as a low interface state density (∼ 3 × 1011 cm-2eV-1 at -0.45 eV from conduction band), and a high breakdown electric field (≥ 8.6 MV/cm) compared to those of the HfO2 and Al2O3 capacitors.

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