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Characteristics of several high-k gate insulators for GaN power device
Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Hajime Kiyono, Yoshihiro Irokawa, Koji Shiozaki, Yasuo Koide
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
3
Citations
(Scopus)