Characteristics of SiOF Films Deposited Using Tetrathylorthosilicate (TEOS) and Fluorotriethoxysilane (FTES) at Room Temperature by chemicalVaper Deposition

T. Homma

Characteristics of SiOF Films Deposited Using Tetrathylorthosilicate (TEOS) and Fluorotriethoxysilane (FTES) at Room Temperature by chemicalVaper Deposition

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	707-711
Journal	Journal of the Electrochemical Society
Volume	143
Publication status	Published - 1996 Feb 1

Cite this

@article{fc54002a6af4476d87779a91bf985819,

title = "Characteristics of SiOF Films Deposited Using Tetrathylorthosilicate (TEOS) and Fluorotriethoxysilane (FTES) at Room Temperature by chemicalVaper Deposition",

author = "T. Homma",

year = "1996",

month = feb,

day = "1",

language = "English",

volume = "143",

pages = "707--711",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

}