Characteristics of SiOF Films Deposited Using Tetrathylorthosilicate (TEOS) and Fluorotriethoxysilane (FTES) at Room Temperature by chemicalVaper Deposition

Research output: Contribution to journalArticle

12 Citations (Scopus)
Original languageEnglish
Pages (from-to)707-711
JournalJournal of the Electrochemical Society
Volume143
Publication statusPublished - 1996 Feb 1

Cite this

@article{fc54002a6af4476d87779a91bf985819,
title = "Characteristics of SiOF Films Deposited Using Tetrathylorthosilicate (TEOS) and Fluorotriethoxysilane (FTES) at Room Temperature by chemicalVaper Deposition",
author = "T. Homma",
year = "1996",
month = "2",
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language = "English",
volume = "143",
pages = "707--711",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",

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T1 - Characteristics of SiOF Films Deposited Using Tetrathylorthosilicate (TEOS) and Fluorotriethoxysilane (FTES) at Room Temperature by chemicalVaper Deposition

AU - Homma, T.

PY - 1996/2/1

Y1 - 1996/2/1

M3 - Article

VL - 143

SP - 707

EP - 711

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

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