Characterization of current-induced degradation in Be-doped HBT's based in GaAs and InP

Shinichi Tanaka, Hidenori Shimawaki, Kensuke Kasahara, Kazuhiko Honjo

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The changes in the device characteristics under high-bias conditions are investigated for InAlAs/InGaAs and AlGaAs/GaAs heterojunction bipolar transistors (HBT's) with heavily Be-doped base layers. While the collector current turn-on voltage shift in AlGaAs/GaAs HBT's has been well-studied, we focus on the base current and 1/f noise characteristics. It is shown that the ideality factor of the surface recombination base current provides information on the Be movement accompanying the degradation. For stress current densities up to 1.5 × 105 A/cm2, the Be movement in the InAlAs/InGaAs HBT's is estimated to be no more than a small fraction of the 5-nm setback layer. The 1/f noise measurements highlight the effect of current stressing on the surface recombination in the HBT's. A characteristic spectral shape is found in the noise spectra for the current-stressed AlGaAs/GaAs HBT, possibly originating from the degradation-induced carrier traps. Although both HBT's have similar electronic properties, these results illustrate the striking difference in their stress current behaviors.

Original languageEnglish
Pages (from-to)1194-1201
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume40
Issue number7
DOIs
Publication statusPublished - 1993 Jul
Externally publishedYes

Fingerprint

Induced currents
Heterojunction bipolar transistors
bipolar transistors
heterojunctions
degradation
Degradation
aluminum gallium arsenides
noise spectra
noise measurement
Electronic properties
accumulators
gallium arsenide
Current density
traps
current density
shift
Electric potential
electric potential
electronics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Characterization of current-induced degradation in Be-doped HBT's based in GaAs and InP. / Tanaka, Shinichi; Shimawaki, Hidenori; Kasahara, Kensuke; Honjo, Kazuhiko.

In: IEEE Transactions on Electron Devices, Vol. 40, No. 7, 07.1993, p. 1194-1201.

Research output: Contribution to journalArticle

Tanaka, Shinichi ; Shimawaki, Hidenori ; Kasahara, Kensuke ; Honjo, Kazuhiko. / Characterization of current-induced degradation in Be-doped HBT's based in GaAs and InP. In: IEEE Transactions on Electron Devices. 1993 ; Vol. 40, No. 7. pp. 1194-1201.
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