Original language | English |
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Pages (from-to) | 1194-1201 |
Journal | IEEE Transaction on Electron Devices |
Volume | 40 |
Publication status | Published - 1993 Jul 1 |
Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.
S.Tanaka S.Tanaka, S.Tanaka H.Shimawaki K.Kasahara, K.Honjo K.Honjo, Shinichi Tanaka
Research output: Contribution to journal › Article › peer-review
31
Citations
(Scopus)