Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.

S.Tanaka S.Tanaka, S.Tanaka H.Shimawaki K.Kasahara, K.Honjo K.Honjo, Shinichi Tanaka

Research output: Contribution to journalArticle

30 Citations (Scopus)
Original languageEnglish
Pages (from-to)1194-1201
JournalIEEE Transaction on Electron Devices
Volume40
Publication statusPublished - 1993 Jul 1

Cite this