Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.

S.Tanaka S.Tanaka, S.Tanaka H.Shimawaki K.Kasahara, K.Honjo K.Honjo, Shinichi Tanaka

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1194-1201
Journal	IEEE Transaction on Electron Devices
Volume	40
Publication status	Published - 1993 Jul 1

Cite this

@article{fbc6ae71fefb4de8866a37dde903b770,

title = "Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.",

author = "S.Tanaka S.Tanaka and K.Kasahara, {S.Tanaka H.Shimawaki} and K.Honjo K.Honjo and Shinichi Tanaka",

year = "1993",

month = jul,

day = "1",

language = "English",

volume = "40",

pages = "1194--1201",

journal = "IEEE Transaction on Electron Devices",

}