| Original language | English |
|---|---|
| Pages (from-to) | 1194-1201 |
| Journal | IEEE Transaction on Electron Devices |
| Volume | 40 |
| Publication status | Published - 1993 Jul 1 |
Cite this
S.Tanaka, S. T., K.Kasahara, S. T. H. S., K.Honjo, K. H., & Tanaka, S. (1993). Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP. IEEE Transaction on Electron Devices, 40, 1194-1201.
Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP. / S.Tanaka, S.Tanaka; K.Kasahara, S.Tanaka H.Shimawaki; K.Honjo, K.Honjo; Tanaka, Shinichi.
In: IEEE Transaction on Electron Devices, Vol. 40, 01.07.1993, p. 1194-1201.Research output: Contribution to journal › Article
S.Tanaka, ST, K.Kasahara, STHS, K.Honjo, KH & Tanaka, S 1993, 'Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.', IEEE Transaction on Electron Devices, vol. 40, pp. 1194-1201.
S.Tanaka ST, K.Kasahara STHS, K.Honjo KH, Tanaka S. Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP. IEEE Transaction on Electron Devices. 1993 Jul 1;40:1194-1201.
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title = "Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.",
author = "S.Tanaka S.Tanaka and K.Kasahara, {S.Tanaka H.Shimawaki} and K.Honjo K.Honjo and Shinichi Tanaka",
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AU - K.Honjo, K.Honjo
AU - Tanaka, Shinichi
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