Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.

S.Tanaka S.Tanaka, S.Tanaka H.Shimawaki K.Kasahara, K.Honjo K.Honjo, Shinichi Tanaka

Research output: Contribution to journalArticle

30 Citations (Scopus)
Original languageEnglish
Pages (from-to)1194-1201
JournalIEEE Transaction on Electron Devices
Volume40
Publication statusPublished - 1993 Jul 1

Cite this

Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP. / S.Tanaka, S.Tanaka; K.Kasahara, S.Tanaka H.Shimawaki; K.Honjo, K.Honjo; Tanaka, Shinichi.

In: IEEE Transaction on Electron Devices, Vol. 40, 01.07.1993, p. 1194-1201.

Research output: Contribution to journalArticle

S.Tanaka, S.Tanaka ; K.Kasahara, S.Tanaka H.Shimawaki ; K.Honjo, K.Honjo ; Tanaka, Shinichi. / Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP. In: IEEE Transaction on Electron Devices. 1993 ; Vol. 40. pp. 1194-1201.
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