Characterization of different-Al-content AlGaN/GaN heterostructures and high-electron-mobility transistors grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy

Makoto Miyoshi, Masahiro Sakai, Subramaniam Arulkumaran, Hiroyasu Ishikawa, Takashi Egawa, Mitsuhiro Tanaka, Osamu Oda

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Different-Al-content AlxGa1-xN/GaN (0.26 ≤ x ≤ 0.52) high-electron-mobility transistor (HEMT) structures were grown on large-area 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A low sheet resistance of approximately 380 Ω/sq. and an in-wafer total variation of 7.6% with a standard deviation of 1.6% were obtained for the sample with the highest Al content of 0.52. The two-dimensional electron gas (2DEG) density and room-temperature Hall mobility of the Al0.52Ga0.48N/GaN HEMT structures were 1.76 × 1013/cm2 and 971 cm2/Vs with in-wafer total variations of 7.8% and 8.1%, respectively. HEMTs were successfully fabricated and they exhibited good dc characteristics. The dependence of maximum source-drain current density on Al content was consistent with the Al content dependence of sheet carrier concentration. The highest source-drain current density of 1033 mA/mm with a maximum extrinsic transconductance of 228 mS/mm was obtained for 2-μm-gate-length Al0.52Ga 0.48N/GaN HEMTs.

Original languageEnglish
Pages (from-to)7939-7943
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number12
Publication statusPublished - 2004 Dec 1



  • 100-mm-diameter sapphire
  • AlGaN/GaN
  • HEMT
  • High al content
  • Uniformity

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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