Abstract
Different-Al-content AlxGa1-xN/GaN (0.26 ≤ x ≤ 0.52) high-electron-mobility transistor (HEMT) structures were grown on large-area 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A low sheet resistance of approximately 380 Ω/sq. and an in-wafer total variation of 7.6% with a standard deviation of 1.6% were obtained for the sample with the highest Al content of 0.52. The two-dimensional electron gas (2DEG) density and room-temperature Hall mobility of the Al0.52Ga0.48N/GaN HEMT structures were 1.76 × 1013/cm2 and 971 cm2/Vs with in-wafer total variations of 7.8% and 8.1%, respectively. HEMTs were successfully fabricated and they exhibited good dc characteristics. The dependence of maximum source-drain current density on Al content was consistent with the Al content dependence of sheet carrier concentration. The highest source-drain current density of 1033 mA/mm with a maximum extrinsic transconductance of 228 mS/mm was obtained for 2-μm-gate-length Al0.52Ga 0.48N/GaN HEMTs.
| Original language | English |
|---|---|
| Pages (from-to) | 7939-7943 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2004 Dec |
| Externally published | Yes |
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Keywords
- 100-mm-diameter sapphire
- AlGaN/GaN
- HEMT
- High al content
- MOVPE
- Uniformity
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Characterization of different-Al-content AlGaN/GaN heterostructures and high-electron-mobility transistors grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy. / Miyoshi, Makoto; Sakai, Masahiro; Arulkumaran, Subramaniam; Ishikawa, Hiroyasu; Egawa, Takashi; Tanaka, Mitsuhiro; Oda, Osamu.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 12, 12.2004, p. 7939-7943.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characterization of different-Al-content AlGaN/GaN heterostructures and high-electron-mobility transistors grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy
AU - Miyoshi, Makoto
AU - Sakai, Masahiro
AU - Arulkumaran, Subramaniam
AU - Ishikawa, Hiroyasu
AU - Egawa, Takashi
AU - Tanaka, Mitsuhiro
AU - Oda, Osamu
PY - 2004/12
Y1 - 2004/12
N2 - Different-Al-content AlxGa1-xN/GaN (0.26 ≤ x ≤ 0.52) high-electron-mobility transistor (HEMT) structures were grown on large-area 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A low sheet resistance of approximately 380 Ω/sq. and an in-wafer total variation of 7.6% with a standard deviation of 1.6% were obtained for the sample with the highest Al content of 0.52. The two-dimensional electron gas (2DEG) density and room-temperature Hall mobility of the Al0.52Ga0.48N/GaN HEMT structures were 1.76 × 1013/cm2 and 971 cm2/Vs with in-wafer total variations of 7.8% and 8.1%, respectively. HEMTs were successfully fabricated and they exhibited good dc characteristics. The dependence of maximum source-drain current density on Al content was consistent with the Al content dependence of sheet carrier concentration. The highest source-drain current density of 1033 mA/mm with a maximum extrinsic transconductance of 228 mS/mm was obtained for 2-μm-gate-length Al0.52Ga 0.48N/GaN HEMTs.
AB - Different-Al-content AlxGa1-xN/GaN (0.26 ≤ x ≤ 0.52) high-electron-mobility transistor (HEMT) structures were grown on large-area 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A low sheet resistance of approximately 380 Ω/sq. and an in-wafer total variation of 7.6% with a standard deviation of 1.6% were obtained for the sample with the highest Al content of 0.52. The two-dimensional electron gas (2DEG) density and room-temperature Hall mobility of the Al0.52Ga0.48N/GaN HEMT structures were 1.76 × 1013/cm2 and 971 cm2/Vs with in-wafer total variations of 7.8% and 8.1%, respectively. HEMTs were successfully fabricated and they exhibited good dc characteristics. The dependence of maximum source-drain current density on Al content was consistent with the Al content dependence of sheet carrier concentration. The highest source-drain current density of 1033 mA/mm with a maximum extrinsic transconductance of 228 mS/mm was obtained for 2-μm-gate-length Al0.52Ga 0.48N/GaN HEMTs.
KW - 100-mm-diameter sapphire
KW - AlGaN/GaN
KW - HEMT
KW - High al content
KW - MOVPE
KW - Uniformity
UR - http://www.scopus.com/inward/record.url?scp=13644278150&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=13644278150&partnerID=8YFLogxK
U2 - 10.1143/JJAP.43.7939
DO - 10.1143/JJAP.43.7939
M3 - Article
AN - SCOPUS:13644278150
VL - 43
SP - 7939
EP - 7943
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
ER -