Characterization of different-Al-content AlGaN/GaN heterostructures and high-electron-mobility transistors grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy

Makoto Miyoshi, Masahiro Sakai, Subramaniam Arulkumaran, Hiroyasu Ishikawa, Takashi Egawa, Mitsuhiro Tanaka, Osamu Oda

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Different-Al-content AlxGa1-xN/GaN (0.26 ≤ x ≤ 0.52) high-electron-mobility transistor (HEMT) structures were grown on large-area 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A low sheet resistance of approximately 380 Ω/sq. and an in-wafer total variation of 7.6% with a standard deviation of 1.6% were obtained for the sample with the highest Al content of 0.52. The two-dimensional electron gas (2DEG) density and room-temperature Hall mobility of the Al0.52Ga0.48N/GaN HEMT structures were 1.76 × 1013/cm2 and 971 cm2/Vs with in-wafer total variations of 7.8% and 8.1%, respectively. HEMTs were successfully fabricated and they exhibited good dc characteristics. The dependence of maximum source-drain current density on Al content was consistent with the Al content dependence of sheet carrier concentration. The highest source-drain current density of 1033 mA/mm with a maximum extrinsic transconductance of 228 mS/mm was obtained for 2-μm-gate-length Al0.52Ga 0.48N/GaN HEMTs.

Original languageEnglish
Pages (from-to)7939-7943
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number12
DOIs
Publication statusPublished - 2004 Dec
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
High electron mobility transistors
high electron mobility transistors
Sapphire
vapor phase epitaxy
Heterojunctions
sapphire
Two dimensional electron gas
Drain current
Substrates
Current density
wafers
current density
Hall mobility
Sheet resistance
Transconductance
gas density
transconductance
Carrier concentration
electron gas

Keywords

  • 100-mm-diameter sapphire
  • AlGaN/GaN
  • HEMT
  • High al content
  • MOVPE
  • Uniformity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Characterization of different-Al-content AlGaN/GaN heterostructures and high-electron-mobility transistors grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy. / Miyoshi, Makoto; Sakai, Masahiro; Arulkumaran, Subramaniam; Ishikawa, Hiroyasu; Egawa, Takashi; Tanaka, Mitsuhiro; Oda, Osamu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 12, 12.2004, p. 7939-7943.

Research output: Contribution to journalArticle

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abstract = "Different-Al-content AlxGa1-xN/GaN (0.26 ≤ x ≤ 0.52) high-electron-mobility transistor (HEMT) structures were grown on large-area 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A low sheet resistance of approximately 380 Ω/sq. and an in-wafer total variation of 7.6{\%} with a standard deviation of 1.6{\%} were obtained for the sample with the highest Al content of 0.52. The two-dimensional electron gas (2DEG) density and room-temperature Hall mobility of the Al0.52Ga0.48N/GaN HEMT structures were 1.76 × 1013/cm2 and 971 cm2/Vs with in-wafer total variations of 7.8{\%} and 8.1{\%}, respectively. HEMTs were successfully fabricated and they exhibited good dc characteristics. The dependence of maximum source-drain current density on Al content was consistent with the Al content dependence of sheet carrier concentration. The highest source-drain current density of 1033 mA/mm with a maximum extrinsic transconductance of 228 mS/mm was obtained for 2-μm-gate-length Al0.52Ga 0.48N/GaN HEMTs.",
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