Characterization of different-Al-content AlGaN/GaN heterostructures and high-electron-mobility transistors grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy

Makoto Miyoshi, Masahiro Sakai, Subramaniam Arulkumaran, Hiroyasu Ishikawa, Takashi Egawa, Mitsuhiro Tanaka, Osamu Oda

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

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Engineering & Materials Science

Physics & Astronomy