Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

S. Arulkumaran; T. Egawa; H. Ishikawa; T. Jimbo

Characterization of different-Al-content Al_xGa_1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

Research output: Contribution to journal › Article › peer-review

Abstract

A study of characterization of different-Al-content Al_xGa_1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire was presented. Al_xGa_1-xN/GaN heterostructures were grown on a sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition. An increase of two-dimensional-electron-gas (2DEG) mobility with the increase of Al content was observed which was due to the strain induced piezoelectric and spontaneous polarization.

Original language	English
Pages (from-to)	888-894
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	2
Publication status	Published - 2003 Mar 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Characterization of different-Al-content Al_xGa_1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire. / Arulkumaran, S.; Egawa, T.; Ishikawa, H. et al.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 2, 01.03.2003, p. 888-894.

Research output: Contribution to journal › Article › peer-review

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AU - Jimbo, T.

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AB - A study of characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire was presented. AlxGa1-xN/GaN heterostructures were grown on a sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition. An increase of two-dimensional-electron-gas (2DEG) mobility with the increase of Al content was observed which was due to the strain induced piezoelectric and spontaneous polarization.

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Characterization of different-Al-content Al_xGa_1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

Abstract

ASJC Scopus subject areas

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