Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

S. Arulkumaran, T. Egawa, Hiroyasu Ishikawa, T. Jimbo

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

A study of characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire was presented. AlxGa1-xN/GaN heterostructures were grown on a sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition. An increase of two-dimensional-electron-gas (2DEG) mobility with the increase of Al content was observed which was due to the strain induced piezoelectric and spontaneous polarization.

Original languageEnglish
Pages (from-to)888-894
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number2
Publication statusPublished - 2003 Mar
Externally publishedYes

Fingerprint

Two dimensional electron gas
High electron mobility transistors
high electron mobility transistors
Sapphire
Heterojunctions
sapphire
Metallorganic chemical vapor deposition
Atmospheric pressure
metalorganic chemical vapor deposition
electron gas
atmospheric pressure
Polarization
Substrates
polarization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

@article{f5648ddc51164309ac66db52e1598082,
title = "Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire",
abstract = "A study of characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire was presented. AlxGa1-xN/GaN heterostructures were grown on a sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition. An increase of two-dimensional-electron-gas (2DEG) mobility with the increase of Al content was observed which was due to the strain induced piezoelectric and spontaneous polarization.",
author = "S. Arulkumaran and T. Egawa and Hiroyasu Ishikawa and T. Jimbo",
year = "2003",
month = "3",
language = "English",
volume = "21",
pages = "888--894",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "2",

}

TY - JOUR

T1 - Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

AU - Arulkumaran, S.

AU - Egawa, T.

AU - Ishikawa, Hiroyasu

AU - Jimbo, T.

PY - 2003/3

Y1 - 2003/3

N2 - A study of characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire was presented. AlxGa1-xN/GaN heterostructures were grown on a sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition. An increase of two-dimensional-electron-gas (2DEG) mobility with the increase of Al content was observed which was due to the strain induced piezoelectric and spontaneous polarization.

AB - A study of characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire was presented. AlxGa1-xN/GaN heterostructures were grown on a sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition. An increase of two-dimensional-electron-gas (2DEG) mobility with the increase of Al content was observed which was due to the strain induced piezoelectric and spontaneous polarization.

UR - http://www.scopus.com/inward/record.url?scp=0037279895&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037279895&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0037279895

VL - 21

SP - 888

EP - 894

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 2

ER -