Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

Research output: Contribution to journalArticle

85 Citations (Scopus)

Abstract

A study of characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire was presented. AlxGa1-xN/GaN heterostructures were grown on a sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition. An increase of two-dimensional-electron-gas (2DEG) mobility with the increase of Al content was observed which was due to the strain induced piezoelectric and spontaneous polarization.

Original languageEnglish
Pages (from-to)888-894
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number2
Publication statusPublished - 2003 Mar 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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