Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

Hiroyasu Ishikawa, Baijun Zhang, Kenta Asano, Takashi Egawa, Takashi Jimbo

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We report the improved characteristics of GaInN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on Si substrate by an insertion of distributed Bragg reflector (DBR). The DBR-based GaInN MQW LED structures were grown on 2-in-diameter n-Si (111) substrates using a metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in DBR was changed from 1 to 5. No cracks were observed over the entire area of the DBR-based LED structure with less than 3-pair DBR. The light output power of the 3-pair DBR-based LED is approximately two times larger than that of the non-DBR-based LED.

Original languageEnglish
Pages (from-to)322-326
Number of pages5
JournalJournal of Crystal Growth
Volume272
Issue number1-4 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Dec 10
Externally publishedYes

Fingerprint

Distributed Bragg reflectors
Bragg reflectors
Light emitting diodes
light emitting diodes
Semiconductor quantum wells
quantum wells
Metallorganic chemical vapor deposition
Substrates
metalorganic chemical vapor deposition
insertion
Cracks
cracks
output

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides
  • B3. Light-emitting diodes

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si. / Ishikawa, Hiroyasu; Zhang, Baijun; Asano, Kenta; Egawa, Takashi; Jimbo, Takashi.

In: Journal of Crystal Growth, Vol. 272, No. 1-4 SPEC. ISS., 10.12.2004, p. 322-326.

Research output: Contribution to journalArticle

Ishikawa, Hiroyasu ; Zhang, Baijun ; Asano, Kenta ; Egawa, Takashi ; Jimbo, Takashi. / Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si. In: Journal of Crystal Growth. 2004 ; Vol. 272, No. 1-4 SPEC. ISS. pp. 322-326.
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