Characterization of InP/InGaAs heterojunction bipolar transistors with carbon-doped base layers grown by metal-organic chemical vapor deposition and molecular beam epitaxy

Naotaka Kuroda, Akira Fujihara, Yoshifumi Ikenaga, Haruya Ishizaki, Shinichi Tanaka

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2 Citations (Scopus)

Abstract

We characterized InP/InGaAs heterojunction bipolar transistors (HBTs) with carbon-doped InGaAs base layers grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Since HBTs grown using these techniques require different processing steps, resulting in different types of process-related damage, we analyzed the bulk and periphery components of DC characteristics to clarify the effects of the crystal growth and process techniques on device characteristics separately. The MBE-grown HBTs were found to have an advantage over the MOCVD-grown HBTs, because they do not require harmful high-temperature annealing during processing steps. On the other hand, it was also shown that the MOCVD-grown HBTs have a significantly lower base recombination rate than the MBE-grown HBTs, making MOCVD a suitable method of growing InP HBTs that do not require annealing, such as that with a GaAsSb base.

Original languageEnglish
Pages (from-to)6412-6416
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number9 A
DOIs
Publication statusPublished - 2005 Sep 8
Externally publishedYes

Fingerprint

Organic chemicals
Heterojunction bipolar transistors
bipolar transistors
Molecular beam epitaxy
metalorganic chemical vapor deposition
heterojunctions
Chemical vapor deposition
molecular beam epitaxy
Carbon
carbon
Metals
Annealing
annealing
Processing
Crystal growth
crystal growth
direct current
damage

Keywords

  • Carbon doping
  • Effect
  • Emitter-size
  • HBT
  • Hydrogen passivation
  • InGaAs
  • InP

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Characterization of InP/InGaAs heterojunction bipolar transistors with carbon-doped base layers grown by metal-organic chemical vapor deposition and molecular beam epitaxy",
abstract = "We characterized InP/InGaAs heterojunction bipolar transistors (HBTs) with carbon-doped InGaAs base layers grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Since HBTs grown using these techniques require different processing steps, resulting in different types of process-related damage, we analyzed the bulk and periphery components of DC characteristics to clarify the effects of the crystal growth and process techniques on device characteristics separately. The MBE-grown HBTs were found to have an advantage over the MOCVD-grown HBTs, because they do not require harmful high-temperature annealing during processing steps. On the other hand, it was also shown that the MOCVD-grown HBTs have a significantly lower base recombination rate than the MBE-grown HBTs, making MOCVD a suitable method of growing InP HBTs that do not require annealing, such as that with a GaAsSb base.",
keywords = "Carbon doping, Effect, Emitter-size, HBT, Hydrogen passivation, InGaAs, InP",
author = "Naotaka Kuroda and Akira Fujihara and Yoshifumi Ikenaga and Haruya Ishizaki and Shinichi Tanaka",
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T1 - Characterization of InP/InGaAs heterojunction bipolar transistors with carbon-doped base layers grown by metal-organic chemical vapor deposition and molecular beam epitaxy

AU - Kuroda, Naotaka

AU - Fujihara, Akira

AU - Ikenaga, Yoshifumi

AU - Ishizaki, Haruya

AU - Tanaka, Shinichi

PY - 2005/9/8

Y1 - 2005/9/8

N2 - We characterized InP/InGaAs heterojunction bipolar transistors (HBTs) with carbon-doped InGaAs base layers grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Since HBTs grown using these techniques require different processing steps, resulting in different types of process-related damage, we analyzed the bulk and periphery components of DC characteristics to clarify the effects of the crystal growth and process techniques on device characteristics separately. The MBE-grown HBTs were found to have an advantage over the MOCVD-grown HBTs, because they do not require harmful high-temperature annealing during processing steps. On the other hand, it was also shown that the MOCVD-grown HBTs have a significantly lower base recombination rate than the MBE-grown HBTs, making MOCVD a suitable method of growing InP HBTs that do not require annealing, such as that with a GaAsSb base.

AB - We characterized InP/InGaAs heterojunction bipolar transistors (HBTs) with carbon-doped InGaAs base layers grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Since HBTs grown using these techniques require different processing steps, resulting in different types of process-related damage, we analyzed the bulk and periphery components of DC characteristics to clarify the effects of the crystal growth and process techniques on device characteristics separately. The MBE-grown HBTs were found to have an advantage over the MOCVD-grown HBTs, because they do not require harmful high-temperature annealing during processing steps. On the other hand, it was also shown that the MOCVD-grown HBTs have a significantly lower base recombination rate than the MBE-grown HBTs, making MOCVD a suitable method of growing InP HBTs that do not require annealing, such as that with a GaAsSb base.

KW - Carbon doping

KW - Effect

KW - Emitter-size

KW - HBT

KW - Hydrogen passivation

KW - InGaAs

KW - InP

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