Characterization of InP/InGaAs heterojunction bipolar transistors with carbon-doped base layers grown by metal-organic chemical vapor deposition and molecular beam epitaxy

Naotaka Kuroda, Akira Fujihara, Yoshifumi Ikenaga, Haruya Ishizaki, Shinichi Tanaka

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We characterized InP/InGaAs heterojunction bipolar transistors (HBTs) with carbon-doped InGaAs base layers grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Since HBTs grown using these techniques require different processing steps, resulting in different types of process-related damage, we analyzed the bulk and periphery components of DC characteristics to clarify the effects of the crystal growth and process techniques on device characteristics separately. The MBE-grown HBTs were found to have an advantage over the MOCVD-grown HBTs, because they do not require harmful high-temperature annealing during processing steps. On the other hand, it was also shown that the MOCVD-grown HBTs have a significantly lower base recombination rate than the MBE-grown HBTs, making MOCVD a suitable method of growing InP HBTs that do not require annealing, such as that with a GaAsSb base.

Original languageEnglish
Pages (from-to)6412-6416
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number9 A
DOIs
Publication statusPublished - 2005 Sep 8

Keywords

  • Carbon doping
  • Effect
  • Emitter-size
  • HBT
  • Hydrogen passivation
  • InGaAs
  • InP

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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