Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy

M. Hattori, Y. Nishihara, Y. Ohki, M. Fujimaki, T. Souno, Hiroyuki Nishikawa, T. Yamaguchi, E. Watanabe, M. Oikawa, T. Kamiya, K. Arakawa

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We investigate the mechanisms of defect formation and optical absorption induced by ion implantation, for fabrication of optical devices by radiation effects. High-purity silica implanted by H+ or He2+ was characterized using vacuum-ultraviolet spectroscopy and electron-spin-resonance measurement. Defect formation is suppressed by OH groups, possibly by the release of atomic hydrogen. The E′ center and nonbridging oxygen hole center were created through pair generation from the normal Si-O-Si bond. The peroxy radical was generated through the reaction of the E′ center with interstitial oxygen, which is a Frenkel-defect pair with an oxygen vacancy. By the Kramers-Kronig analysis on the MeV-ion implantation-induced defects, a refractive index increase of the order of 10-4 was estimated.

Original languageEnglish
Pages (from-to)362-365
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume191
Issue number1-4
DOIs
Publication statusPublished - 2002 May

Fingerprint

ultraviolet absorption
ultraviolet spectroscopy
silica glass
Fused silica
Ultraviolet spectroscopy
Absorption spectroscopy
absorption spectroscopy
Vacuum
Ions
Defects
vacuum
ion implantation
defects
oxygen
vacuum spectroscopy
Ion implantation
Frenkel defects
ions
radiation effects
Oxygen

Keywords

  • Electron spin resonance
  • Ion implantation
  • Silica glass
  • Vacuum ultraviolet

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy. / Hattori, M.; Nishihara, Y.; Ohki, Y.; Fujimaki, M.; Souno, T.; Nishikawa, Hiroyuki; Yamaguchi, T.; Watanabe, E.; Oikawa, M.; Kamiya, T.; Arakawa, K.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 191, No. 1-4, 05.2002, p. 362-365.

Research output: Contribution to journalArticle

Hattori, M. ; Nishihara, Y. ; Ohki, Y. ; Fujimaki, M. ; Souno, T. ; Nishikawa, Hiroyuki ; Yamaguchi, T. ; Watanabe, E. ; Oikawa, M. ; Kamiya, T. ; Arakawa, K. / Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2002 ; Vol. 191, No. 1-4. pp. 362-365.
@article{3a742399b36a417bae524d61888ba466,
title = "Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy",
abstract = "We investigate the mechanisms of defect formation and optical absorption induced by ion implantation, for fabrication of optical devices by radiation effects. High-purity silica implanted by H+ or He2+ was characterized using vacuum-ultraviolet spectroscopy and electron-spin-resonance measurement. Defect formation is suppressed by OH groups, possibly by the release of atomic hydrogen. The E′ center and nonbridging oxygen hole center were created through pair generation from the normal Si-O-Si bond. The peroxy radical was generated through the reaction of the E′ center with interstitial oxygen, which is a Frenkel-defect pair with an oxygen vacancy. By the Kramers-Kronig analysis on the MeV-ion implantation-induced defects, a refractive index increase of the order of 10-4 was estimated.",
keywords = "Electron spin resonance, Ion implantation, Silica glass, Vacuum ultraviolet",
author = "M. Hattori and Y. Nishihara and Y. Ohki and M. Fujimaki and T. Souno and Hiroyuki Nishikawa and T. Yamaguchi and E. Watanabe and M. Oikawa and T. Kamiya and K. Arakawa",
year = "2002",
month = "5",
doi = "10.1016/S0168-583X(02)00537-2",
language = "English",
volume = "191",
pages = "362--365",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy

AU - Hattori, M.

AU - Nishihara, Y.

AU - Ohki, Y.

AU - Fujimaki, M.

AU - Souno, T.

AU - Nishikawa, Hiroyuki

AU - Yamaguchi, T.

AU - Watanabe, E.

AU - Oikawa, M.

AU - Kamiya, T.

AU - Arakawa, K.

PY - 2002/5

Y1 - 2002/5

N2 - We investigate the mechanisms of defect formation and optical absorption induced by ion implantation, for fabrication of optical devices by radiation effects. High-purity silica implanted by H+ or He2+ was characterized using vacuum-ultraviolet spectroscopy and electron-spin-resonance measurement. Defect formation is suppressed by OH groups, possibly by the release of atomic hydrogen. The E′ center and nonbridging oxygen hole center were created through pair generation from the normal Si-O-Si bond. The peroxy radical was generated through the reaction of the E′ center with interstitial oxygen, which is a Frenkel-defect pair with an oxygen vacancy. By the Kramers-Kronig analysis on the MeV-ion implantation-induced defects, a refractive index increase of the order of 10-4 was estimated.

AB - We investigate the mechanisms of defect formation and optical absorption induced by ion implantation, for fabrication of optical devices by radiation effects. High-purity silica implanted by H+ or He2+ was characterized using vacuum-ultraviolet spectroscopy and electron-spin-resonance measurement. Defect formation is suppressed by OH groups, possibly by the release of atomic hydrogen. The E′ center and nonbridging oxygen hole center were created through pair generation from the normal Si-O-Si bond. The peroxy radical was generated through the reaction of the E′ center with interstitial oxygen, which is a Frenkel-defect pair with an oxygen vacancy. By the Kramers-Kronig analysis on the MeV-ion implantation-induced defects, a refractive index increase of the order of 10-4 was estimated.

KW - Electron spin resonance

KW - Ion implantation

KW - Silica glass

KW - Vacuum ultraviolet

UR - http://www.scopus.com/inward/record.url?scp=18144444825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18144444825&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(02)00537-2

DO - 10.1016/S0168-583X(02)00537-2

M3 - Article

VL - 191

SP - 362

EP - 365

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -