Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si

H. Ishikawa, B. Zhang, K. Asano, T. Egawa, T. Jimbo

Research output: Contribution to journal › Article

20 Citations (Scopus)
Original languageEnglish
JournalDefault journal
Publication statusPublished - 2004 May 1

Cite this

Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si. / Ishikawa, H.; Zhang, B.; Asano, K.; Egawa, T.; Jimbo, T.

In: Default journal, 01.05.2004.

Research output: Contribution to journal › Article

Ishikawa, H, Zhang, B, Asano, K, Egawa, T & Jimbo, T 2004, 'Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si', Default journal.
Ishikawa H, Zhang B, Asano K, Egawa T, Jimbo T. Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si. Default journal. 2004 May 1.
Ishikawa, H. ; Zhang, B. ; Asano, K. ; Egawa, T. ; Jimbo, T. / Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si. In: Default journal. 2004.
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AU - Jimbo, T.

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