Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si

H. Ishikawa, B. Zhang, K. Asano, T. Egawa, T. Jimbo

Research output: Contribution to journalArticle

20 Citations (Scopus)
Original languageEnglish
JournalDefault journal
Publication statusPublished - 2004 May 1

Cite this

Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si. / Ishikawa, H.; Zhang, B.; Asano, K.; Egawa, T.; Jimbo, T.

In: Default journal, 01.05.2004.

Research output: Contribution to journalArticle

@article{b0e7e712e643479ca8f8706de16ed0d2,
title = "Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si",
author = "H. Ishikawa and B. Zhang and K. Asano and T. Egawa and T. Jimbo",
year = "2004",
month = "5",
day = "1",
language = "English",
journal = "Default journal",

}

TY - JOUR

T1 - Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si

AU - Ishikawa, H.

AU - Zhang, B.

AU - Asano, K.

AU - Egawa, T.

AU - Jimbo, T.

PY - 2004/5/1

Y1 - 2004/5/1

M3 - Article

JO - Default journal

JF - Default journal

ER -