Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

T. Egawa, G. Y. Zhao, Hiroyasu Ishikawa, M. Umeno, T. Jimbo

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Abstract

A recessed gate high electron mobility transistor (HEMT) has been fabricated with AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor deposition. Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron gas (2DEG) at Al0.11Ga0.89N/GaN heterointerface. A 2DEG mobility 12 000 cm2/V-s with a sheet carrier density 2.8 × 1012 cm-2 was measured on Al0.11Ga0.89N/GaN heterostructure at 8.9K. The recessed gate Al0.26Ga0.74N/GaN HEMT structure showed maximum extrinsic transconductance 181 mS/mm and drain-source current 1120 mA/mm for a gate length 1.5 μm at 25°C. The device exhibited stable operation characteristics at 350°C for long time (500 h). No interfacial change has been observed at metal/AlGaN interface even after 350 °C for 500 h treatment. The threshold voltage of device does not depend very much on operating temperature (25 to 350°C).

Original languageEnglish
Pages (from-to)603-608
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume48
Issue number3
DOIs
Publication statusPublished - 2001 Mar
Externally publishedYes

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Keywords

  • 2DEG
  • AlGaN/GaN HEMT
  • Recessed gate
  • Shubnikov-de-Haas

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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