Abstract
A recessed gate high electron mobility transistor (HEMT) has been fabricated with AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor deposition. Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron gas (2DEG) at Al0.11Ga0.89N/GaN heterointerface. A 2DEG mobility 12 000 cm2/V-s with a sheet carrier density 2.8 × 1012 cm-2 was measured on Al0.11Ga0.89N/GaN heterostructure at 8.9K. The recessed gate Al0.26Ga0.74N/GaN HEMT structure showed maximum extrinsic transconductance 181 mS/mm and drain-source current 1120 mA/mm for a gate length 1.5 μm at 25°C. The device exhibited stable operation characteristics at 350°C for long time (500 h). No interfacial change has been observed at metal/AlGaN interface even after 350 °C for 500 h treatment. The threshold voltage of device does not depend very much on operating temperature (25 to 350°C).
| Original language | English |
|---|---|
| Pages (from-to) | 603-608 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 48 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2001 Mar |
| Externally published | Yes |
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Keywords
- 2DEG
- AlGaN/GaN HEMT
- Recessed gate
- Shubnikov-de-Haas
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire. / Egawa, T.; Zhao, G. Y.; Ishikawa, Hiroyasu; Umeno, M.; Jimbo, T.
In: IEEE Transactions on Electron Devices, Vol. 48, No. 3, 03.2001, p. 603-608.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire
AU - Egawa, T.
AU - Zhao, G. Y.
AU - Ishikawa, Hiroyasu
AU - Umeno, M.
AU - Jimbo, T.
PY - 2001/3
Y1 - 2001/3
N2 - A recessed gate high electron mobility transistor (HEMT) has been fabricated with AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor deposition. Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron gas (2DEG) at Al0.11Ga0.89N/GaN heterointerface. A 2DEG mobility 12 000 cm2/V-s with a sheet carrier density 2.8 × 1012 cm-2 was measured on Al0.11Ga0.89N/GaN heterostructure at 8.9K. The recessed gate Al0.26Ga0.74N/GaN HEMT structure showed maximum extrinsic transconductance 181 mS/mm and drain-source current 1120 mA/mm for a gate length 1.5 μm at 25°C. The device exhibited stable operation characteristics at 350°C for long time (500 h). No interfacial change has been observed at metal/AlGaN interface even after 350 °C for 500 h treatment. The threshold voltage of device does not depend very much on operating temperature (25 to 350°C).
AB - A recessed gate high electron mobility transistor (HEMT) has been fabricated with AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor deposition. Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron gas (2DEG) at Al0.11Ga0.89N/GaN heterointerface. A 2DEG mobility 12 000 cm2/V-s with a sheet carrier density 2.8 × 1012 cm-2 was measured on Al0.11Ga0.89N/GaN heterostructure at 8.9K. The recessed gate Al0.26Ga0.74N/GaN HEMT structure showed maximum extrinsic transconductance 181 mS/mm and drain-source current 1120 mA/mm for a gate length 1.5 μm at 25°C. The device exhibited stable operation characteristics at 350°C for long time (500 h). No interfacial change has been observed at metal/AlGaN interface even after 350 °C for 500 h treatment. The threshold voltage of device does not depend very much on operating temperature (25 to 350°C).
KW - 2DEG
KW - AlGaN/GaN HEMT
KW - Recessed gate
KW - Shubnikov-de-Haas
UR - http://www.scopus.com/inward/record.url?scp=0035279863&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035279863&partnerID=8YFLogxK
U2 - 10.1109/16.906458
DO - 10.1109/16.906458
M3 - Article
VL - 48
SP - 603
EP - 608
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 3
ER -