Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

T. Egawa; G. Y. Zhao; H. Ishikawa; M. Umeno; T. Jimbo

doi:10.1109/16.906458

Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

T. Egawa, G. Y. Zhao, H. Ishikawa, M. Umeno, T. Jimbo

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

A recessed gate high electron mobility transistor (HEMT) has been fabricated with AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor deposition. Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron gas (2DEG) at Al_0.11Ga_0.89N/GaN heterointerface. A 2DEG mobility 12 000 cm²/V-s with a sheet carrier density 2.8 × 10¹² cm^-2 was measured on Al_0.11Ga_0.89N/GaN heterostructure at 8.9K. The recessed gate Al_0.26Ga_0.74N/GaN HEMT structure showed maximum extrinsic transconductance 181 mS/mm and drain-source current 1120 mA/mm for a gate length 1.5 μm at 25°C. The device exhibited stable operation characteristics at 350°C for long time (500 h). No interfacial change has been observed at metal/AlGaN interface even after 350 °C for 500 h treatment. The threshold voltage of device does not depend very much on operating temperature (25 to 350°C).

Original language	English
Pages (from-to)	603-608
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	3
DOIs	https://doi.org/10.1109/16.906458
Publication status	Published - 2001 Mar 1
Externally published	Yes

Keywords

2DEG
AlGaN/GaN HEMT
Recessed gate
Shubnikov-de-Haas

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire",

abstract = "A recessed gate high electron mobility transistor (HEMT) has been fabricated with AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor deposition. Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron gas (2DEG) at Al0.11Ga0.89N/GaN heterointerface. A 2DEG mobility 12 000 cm2/V-s with a sheet carrier density 2.8 × 1012 cm-2 was measured on Al0.11Ga0.89N/GaN heterostructure at 8.9K. The recessed gate Al0.26Ga0.74N/GaN HEMT structure showed maximum extrinsic transconductance 181 mS/mm and drain-source current 1120 mA/mm for a gate length 1.5 μm at 25°C. The device exhibited stable operation characteristics at 350°C for long time (500 h). No interfacial change has been observed at metal/AlGaN interface even after 350 °C for 500 h treatment. The threshold voltage of device does not depend very much on operating temperature (25 to 350°C).",

keywords = "2DEG, AlGaN/GaN HEMT, Recessed gate, Shubnikov-de-Haas",

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AU - Egawa, T.

AU - Zhao, G. Y.

AU - Ishikawa, H.

AU - Umeno, M.

AU - Jimbo, T.

PY - 2001/3/1

Y1 - 2001/3/1

N2 - A recessed gate high electron mobility transistor (HEMT) has been fabricated with AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor deposition. Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron gas (2DEG) at Al0.11Ga0.89N/GaN heterointerface. A 2DEG mobility 12 000 cm2/V-s with a sheet carrier density 2.8 × 1012 cm-2 was measured on Al0.11Ga0.89N/GaN heterostructure at 8.9K. The recessed gate Al0.26Ga0.74N/GaN HEMT structure showed maximum extrinsic transconductance 181 mS/mm and drain-source current 1120 mA/mm for a gate length 1.5 μm at 25°C. The device exhibited stable operation characteristics at 350°C for long time (500 h). No interfacial change has been observed at metal/AlGaN interface even after 350 °C for 500 h treatment. The threshold voltage of device does not depend very much on operating temperature (25 to 350°C).

AB - A recessed gate high electron mobility transistor (HEMT) has been fabricated with AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor deposition. Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron gas (2DEG) at Al0.11Ga0.89N/GaN heterointerface. A 2DEG mobility 12 000 cm2/V-s with a sheet carrier density 2.8 × 1012 cm-2 was measured on Al0.11Ga0.89N/GaN heterostructure at 8.9K. The recessed gate Al0.26Ga0.74N/GaN HEMT structure showed maximum extrinsic transconductance 181 mS/mm and drain-source current 1120 mA/mm for a gate length 1.5 μm at 25°C. The device exhibited stable operation characteristics at 350°C for long time (500 h). No interfacial change has been observed at metal/AlGaN interface even after 350 °C for 500 h treatment. The threshold voltage of device does not depend very much on operating temperature (25 to 350°C).

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Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

Abstract

Keywords

ASJC Scopus subject areas

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