Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

T. Egawa, G. Y. Zhao, Hiroyasu Ishikawa, M. Umeno, T. Jimbo

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

A recessed gate high electron mobility transistor (HEMT) has been fabricated with AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor deposition. Capacitance-voltage (C-V) and Shubnikov-de Haas measurements have shown the formation of two-dimensional (2-D) electron gas (2DEG) at Al0.11Ga0.89N/GaN heterointerface. A 2DEG mobility 12 000 cm2/V-s with a sheet carrier density 2.8 × 1012 cm-2 was measured on Al0.11Ga0.89N/GaN heterostructure at 8.9K. The recessed gate Al0.26Ga0.74N/GaN HEMT structure showed maximum extrinsic transconductance 181 mS/mm and drain-source current 1120 mA/mm for a gate length 1.5 μm at 25°C. The device exhibited stable operation characteristics at 350°C for long time (500 h). No interfacial change has been observed at metal/AlGaN interface even after 350 °C for 500 h treatment. The threshold voltage of device does not depend very much on operating temperature (25 to 350°C).

Original languageEnglish
Pages (from-to)603-608
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume48
Issue number3
DOIs
Publication statusPublished - 2001 Mar
Externally publishedYes

Fingerprint

Electron gas
Aluminum Oxide
High electron mobility transistors
high electron mobility transistors
Sapphire
Heterojunctions
sapphire
Gates (transistor)
electron gas
Metallorganic chemical vapor deposition
Transconductance
Threshold voltage
Carrier concentration
Capacitance
Metals
transconductance
operating temperature
threshold voltage
metalorganic chemical vapor deposition
Electric potential

Keywords

  • 2DEG
  • AlGaN/GaN HEMT
  • Recessed gate
  • Shubnikov-de-Haas

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire. / Egawa, T.; Zhao, G. Y.; Ishikawa, Hiroyasu; Umeno, M.; Jimbo, T.

In: IEEE Transactions on Electron Devices, Vol. 48, No. 3, 03.2001, p. 603-608.

Research output: Contribution to journalArticle

Egawa, T. ; Zhao, G. Y. ; Ishikawa, Hiroyasu ; Umeno, M. ; Jimbo, T. / Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire. In: IEEE Transactions on Electron Devices. 2001 ; Vol. 48, No. 3. pp. 603-608.
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