CIRCUIT PERFORMANCE OF COMPLEMENTARY HETEROSTRUCTURE MISFET INVERTER USING HIGH MOBILITY 2DEG AND 2DHG.

T. Mizutani, S. Fujita, M. Hirano, N. Kondo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A complementary circuit using high-mobility two-dimensional electron and hole gases (2DEG and 2DHG) induced at the AlGaAs/GaAs heterointerface has been successfully fabricated on an n** plus -Ge/undoped AlGaAs/undoped GaAs heterostructure. Transfer characteristics of a two-stage inverter show sufficiently high and low output levels. A 15-stage ring oscillator shows a minimum delay time of 94 ps at 300 K and 64 ps at 77 K. Circuit simulation using a new gate current model shows that for a multi-input logic gate, a NAND gate configuration is superior to a NOR gate configuration, and that high-speed operation below 20 ps at 77 K is made possible by reducing the gate length to 0. 5 mu m.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Place of PublicationNew York, NY, USA
PublisherIEEE
Pages107-110
Number of pages4
Publication statusPublished - 1986
Externally publishedYes

Fingerprint

Two dimensional electron gas
Logic gates
Circuit simulation
Heterojunctions
Time delay
Electrons
Networks (circuits)
Gases

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Mizutani, T., Fujita, S., Hirano, M., & Kondo, N. (1986). CIRCUIT PERFORMANCE OF COMPLEMENTARY HETEROSTRUCTURE MISFET INVERTER USING HIGH MOBILITY 2DEG AND 2DHG. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 107-110). New York, NY, USA: IEEE.

CIRCUIT PERFORMANCE OF COMPLEMENTARY HETEROSTRUCTURE MISFET INVERTER USING HIGH MOBILITY 2DEG AND 2DHG. / Mizutani, T.; Fujita, S.; Hirano, M.; Kondo, N.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). New York, NY, USA : IEEE, 1986. p. 107-110.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mizutani, T, Fujita, S, Hirano, M & Kondo, N 1986, CIRCUIT PERFORMANCE OF COMPLEMENTARY HETEROSTRUCTURE MISFET INVERTER USING HIGH MOBILITY 2DEG AND 2DHG. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, New York, NY, USA, pp. 107-110.
Mizutani T, Fujita S, Hirano M, Kondo N. CIRCUIT PERFORMANCE OF COMPLEMENTARY HETEROSTRUCTURE MISFET INVERTER USING HIGH MOBILITY 2DEG AND 2DHG. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). New York, NY, USA: IEEE. 1986. p. 107-110
Mizutani, T. ; Fujita, S. ; Hirano, M. ; Kondo, N. / CIRCUIT PERFORMANCE OF COMPLEMENTARY HETEROSTRUCTURE MISFET INVERTER USING HIGH MOBILITY 2DEG AND 2DHG. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). New York, NY, USA : IEEE, 1986. pp. 107-110
@inproceedings{53ad8b2d9de248ac9404cae1d91dae9a,
title = "CIRCUIT PERFORMANCE OF COMPLEMENTARY HETEROSTRUCTURE MISFET INVERTER USING HIGH MOBILITY 2DEG AND 2DHG.",
abstract = "A complementary circuit using high-mobility two-dimensional electron and hole gases (2DEG and 2DHG) induced at the AlGaAs/GaAs heterointerface has been successfully fabricated on an n** plus -Ge/undoped AlGaAs/undoped GaAs heterostructure. Transfer characteristics of a two-stage inverter show sufficiently high and low output levels. A 15-stage ring oscillator shows a minimum delay time of 94 ps at 300 K and 64 ps at 77 K. Circuit simulation using a new gate current model shows that for a multi-input logic gate, a NAND gate configuration is superior to a NOR gate configuration, and that high-speed operation below 20 ps at 77 K is made possible by reducing the gate length to 0. 5 mu m.",
author = "T. Mizutani and S. Fujita and M. Hirano and N. Kondo",
year = "1986",
language = "English",
pages = "107--110",
booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
publisher = "IEEE",

}

TY - GEN

T1 - CIRCUIT PERFORMANCE OF COMPLEMENTARY HETEROSTRUCTURE MISFET INVERTER USING HIGH MOBILITY 2DEG AND 2DHG.

AU - Mizutani, T.

AU - Fujita, S.

AU - Hirano, M.

AU - Kondo, N.

PY - 1986

Y1 - 1986

N2 - A complementary circuit using high-mobility two-dimensional electron and hole gases (2DEG and 2DHG) induced at the AlGaAs/GaAs heterointerface has been successfully fabricated on an n** plus -Ge/undoped AlGaAs/undoped GaAs heterostructure. Transfer characteristics of a two-stage inverter show sufficiently high and low output levels. A 15-stage ring oscillator shows a minimum delay time of 94 ps at 300 K and 64 ps at 77 K. Circuit simulation using a new gate current model shows that for a multi-input logic gate, a NAND gate configuration is superior to a NOR gate configuration, and that high-speed operation below 20 ps at 77 K is made possible by reducing the gate length to 0. 5 mu m.

AB - A complementary circuit using high-mobility two-dimensional electron and hole gases (2DEG and 2DHG) induced at the AlGaAs/GaAs heterointerface has been successfully fabricated on an n** plus -Ge/undoped AlGaAs/undoped GaAs heterostructure. Transfer characteristics of a two-stage inverter show sufficiently high and low output levels. A 15-stage ring oscillator shows a minimum delay time of 94 ps at 300 K and 64 ps at 77 K. Circuit simulation using a new gate current model shows that for a multi-input logic gate, a NAND gate configuration is superior to a NOR gate configuration, and that high-speed operation below 20 ps at 77 K is made possible by reducing the gate length to 0. 5 mu m.

UR - http://www.scopus.com/inward/record.url?scp=0022881834&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022881834&partnerID=8YFLogxK

M3 - Conference contribution

SP - 107

EP - 110

BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

PB - IEEE

CY - New York, NY, USA

ER -