Cleaning of CHF3 plasma-etched SiO2/SiN/Cu via structures using hydrogen plasma, oxygen plasma, and hexafluoroacetylacetone vapor

K.Ueno K.Ueno, V.M.Donnelly V.M.Donnelly, Kazuyoshi Ueno

Research output: Contribution to journalArticle

23 Citations (Scopus)
Original languageEnglish
Pages (from-to)2986-2995
JournalJournal of Vacuum Science and Technology
VolumeB16
Publication statusPublished - 1998 Nov 1

Cite this

Cleaning of CHF3 plasma-etched SiO2/SiN/Cu via structures using hydrogen plasma, oxygen plasma, and hexafluoroacetylacetone vapor. / K.Ueno, K.Ueno; V.M.Donnelly, V.M.Donnelly; Ueno, Kazuyoshi.

In: Journal of Vacuum Science and Technology, Vol. B16, 01.11.1998, p. 2986-2995.

Research output: Contribution to journalArticle

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AU - Ueno, Kazuyoshi

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