CML GAAS 4KB SRAM.

Kazukio Takahashi, Tadashi Maeda, Fumiaki Katano, Takashi Furutsuka, Asamitsu Higashisaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Summary form only given. A CML-compatible GaAs 4-Kb static RAM has been designed. Source-coupled FET logic was used for the peripheral circuit, because it is suitable for the adjustment of the supply voltages and the input/output levels to the CML level, as well as being able to drive large loads. The memory cell, on the other hand, is composed of conventional E/D-DCFL circuitry. The SRAM was fabricated by using sidewall-assisted closely-spaced-electrode FET technology, where the spacings between source and gate, drain and gate are extremely narrow, to reduce the parasitic series resistances. Separation is by 0. 25- mu m films prepared on both sides of the gate electrode. The device was tested by using both the memory tester and the 50- OMEGA high-speed measurement system and was operable at the CML supply voltage level. Read/write operation was confirmed. The minimum address access time was 2. 4 ns for a power dissipation of 1. 08 W.

Original languageEnglish
Title of host publicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
EditorsLewis Winner, Jack A.A. Raper, M. Winner, J. Raper, R.G. Swartz
PublisherLewis Winner
Pages68-69, 308
Publication statusPublished - 1985
Externally publishedYes

Fingerprint

Emitter coupled logic circuits
Static random access storage
Field effect transistors
Data storage equipment
Electrodes
Random access storage
Electric potential
Energy dissipation
Networks (circuits)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Takahashi, K., Maeda, T., Katano, F., Furutsuka, T., & Higashisaka, A. (1985). CML GAAS 4KB SRAM. In L. Winner, J. A. A. Raper, M. Winner, J. Raper, & R. G. Swartz (Eds.), Digest of Technical Papers - IEEE International Solid-State Circuits Conference (pp. 68-69, 308). Lewis Winner.

CML GAAS 4KB SRAM. / Takahashi, Kazukio; Maeda, Tadashi; Katano, Fumiaki; Furutsuka, Takashi; Higashisaka, Asamitsu.

Digest of Technical Papers - IEEE International Solid-State Circuits Conference. ed. / Lewis Winner; Jack A.A. Raper; M. Winner; J. Raper; R.G. Swartz. Lewis Winner, 1985. p. 68-69, 308.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takahashi, K, Maeda, T, Katano, F, Furutsuka, T & Higashisaka, A 1985, CML GAAS 4KB SRAM. in L Winner, JAA Raper, M Winner, J Raper & RG Swartz (eds), Digest of Technical Papers - IEEE International Solid-State Circuits Conference. Lewis Winner, pp. 68-69, 308.
Takahashi K, Maeda T, Katano F, Furutsuka T, Higashisaka A. CML GAAS 4KB SRAM. In Winner L, Raper JAA, Winner M, Raper J, Swartz RG, editors, Digest of Technical Papers - IEEE International Solid-State Circuits Conference. Lewis Winner. 1985. p. 68-69, 308
Takahashi, Kazukio ; Maeda, Tadashi ; Katano, Fumiaki ; Furutsuka, Takashi ; Higashisaka, Asamitsu. / CML GAAS 4KB SRAM. Digest of Technical Papers - IEEE International Solid-State Circuits Conference. editor / Lewis Winner ; Jack A.A. Raper ; M. Winner ; J. Raper ; R.G. Swartz. Lewis Winner, 1985. pp. 68-69, 308
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