Abstract
Monolithic TiB2 films and double layer and composite TiCN-TiB2 films were deposited on Si wafers from a mixture of titanium tetra-ethoxide and boron tri-ethoxide solutions at a 1:2 mole ratio at 800 °C for 20 min by chemical vapor deposition in a thermal N2/H2 plasma. The TiB2 films were deposited without N2, while the double layer and composite TiCN-TiB2 films of various compositions were deposited by varying N2 flow rates in N2/H2 plasma. The surfaces and cross-sections of the films were observed by SEM, exhibiting the microstructures and thickness of the films. The relative atomic percentages of Ti, N, B, bonded and free C, and O in the films were determined semi-quantitatively from their XPS peak areas. Microstructures of the composite films with the composition 3TiC0.5N0.5/2TiB2 formed at N2 = 50 mL min- 1 were observed by TEM, revealing the sizes and orientations of the particles with the distribution of Ti and B elements in the film.
Original language | English |
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Pages (from-to) | 6616-6621 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 516 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2008 Aug 1 |
Externally published | Yes |
Keywords
- Coating
- Composite layer
- Double layer
- PECVD
- TiB
- TiCN
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry