@inproceedings{e0acc8cc44bb405e9824f11ace363ffa,
title = "Commercial Production of Low-k PZT film using Sputtering Method",
abstract = "Monocrystalline-like epitaxial PZT films for commercial use are described for piezoelectric MEMS applications. The composition ratios of Zr and Ti in the films are Morphotropic phase boundary (52:48) and Ti rich (42:58). The films with a thickness of 1 μm to 2 μm exhibit typical transverse piezoelectric d31 coefficients of-185 pm/V and-149 pm/V, respectively. Relative dielectric permittivities are 430 and 264. Dielectric losses are 0.015 and 0.020. Both of films of figure-of-merit for MEMS device are more than 50 GPa. These films are commercially available for piezoelectric MEMS device development and production.",
keywords = "PZT, epitaxial, piezoelectric, sputtering, thin film",
author = "Mario Kiuchi and Ryoma Miyake and Shinya Yoshida and Shuji Tanaka and Tsuyoshi Takemoto and Yukitaka Yamaguchi and Kenji Komaki",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE Sensors, SENSORS 2020 ; Conference date: 25-10-2020 Through 28-10-2020",
year = "2020",
month = oct,
day = "25",
doi = "10.1109/SENSORS47125.2020.9278888",
language = "English",
series = "Proceedings of IEEE Sensors",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "IEEE Sensors, SENSORS 2020 - Conference Proceedings",
}