Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC

S. Arulkumaran, T. Egawa, Hiroyasu Ishikawa, T. Jimbo

Research output: Contribution to journalArticle

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Abstract

The drain-current collapse at high drain voltage has been studied in AlGaN/GaN high-electron-mobility transistors (HEMTs) on both semi-insulating (SI)-SiC and sapphire substrates using small frequency (120 Hz) sinusoidal wave superimposed dc IDS-VDS characteristics. Low drain-current collapses were observed in AlGaN/GaN HEMTs on SI-SiC substrate when compared with the HEMTs on sapphire substrates. Two and three thermally activated deep traps were observed on SiC-based and sapphire-based HEMTs, respectively. The existence of an additional deep trap (ΔE=0.61eV) could be associated with the material defects/ dislocations responsible for the severe drain current collapse in sapphire-based HEMTs. The white-light illuminated I DS-VDS characteristics support the existence of more number of deep traps in the sapphire-based HEMTs.

Original languageEnglish
Pages (from-to)3073-3075
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number16
DOIs
Publication statusPublished - 2002 Oct 14
Externally publishedYes

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high electron mobility transistors
sapphire
traps
low currents
high voltages
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC. / Arulkumaran, S.; Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.

In: Applied Physics Letters, Vol. 81, No. 16, 14.10.2002, p. 3073-3075.

Research output: Contribution to journalArticle

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