TY - JOUR
T1 - Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods
AU - Sun, Yijun
AU - Yamamori, Masayuki
AU - Egawa, Takashi
AU - Ishikawa, Hiroyasu
PY - 2004/3/1
Y1 - 2004/3/1
N2 - GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy are annealed by two methods, ex situ rapid thermal annealing (RTA) and in situ annealing in a growth chamber followed by ex situ RTA (NRTA). The effects of annealing method on the structural, morphological, and optical properties of the QWs are studied comparatively. The results show that although there is surface desorption for both RTA and NRTA, the holes on the sample surface after desorption are clearly different. RTA is better than NRTA from the viewpoints of both surface morphology and optical properties.
AB - GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy are annealed by two methods, ex situ rapid thermal annealing (RTA) and in situ annealing in a growth chamber followed by ex situ RTA (NRTA). The effects of annealing method on the structural, morphological, and optical properties of the QWs are studied comparatively. The results show that although there is surface desorption for both RTA and NRTA, the holes on the sample surface after desorption are clearly different. RTA is better than NRTA from the viewpoints of both surface morphology and optical properties.
KW - Chemical beam epitaxy
KW - GaNAs/GaAs
KW - Rapid thermal annealing
KW - Surface morphology
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U2 - 10.1143/jjap.43.l334
DO - 10.1143/jjap.43.l334
M3 - Article
AN - SCOPUS:2442591932
VL - 43
SP - L334-L336
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 A
ER -