Abstract
GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy are annealed by two methods, ex situ rapid thermal annealing (RTA) and in situ annealing in a growth chamber followed by ex situ RTA (NRTA). The effects of annealing method on the structural, morphological, and optical properties of the QWs are studied comparatively. The results show that although there is surface desorption for both RTA and NRTA, the holes on the sample surface after desorption are clearly different. RTA is better than NRTA from the viewpoints of both surface morphology and optical properties.
| Original language | English |
|---|---|
| Pages (from-to) | L334-L336 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 43 |
| Issue number | 3 A |
| Publication status | Published - 2004 Mar 1 |
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Keywords
- Chemical beam epitaxy
- GaNAs/GaAs
- Rapid thermal annealing
- Surface morphology
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Sun, Y., Yamamori, M., Egawa, T., & Ishikawa, H. (2004). Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods. Japanese Journal of Applied Physics, Part 2: Letters, 43(3 A), L334-L336.