Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods

Yijun Sun; Masayuki Yamamori; Takashi Egawa; Hiroyasu Ishikawa

doi:10.1143/jjap.43.l334

Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods

Yijun Sun, Masayuki Yamamori, Takashi Egawa, Hiroyasu Ishikawa

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy are annealed by two methods, ex situ rapid thermal annealing (RTA) and in situ annealing in a growth chamber followed by ex situ RTA (NRTA). The effects of annealing method on the structural, morphological, and optical properties of the QWs are studied comparatively. The results show that although there is surface desorption for both RTA and NRTA, the holes on the sample surface after desorption are clearly different. RTA is better than NRTA from the viewpoints of both surface morphology and optical properties.

Original language	English
Pages (from-to)	L334-L336
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	43
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.43.l334
Publication status	Published - 2004 Mar 1
Externally published	Yes

Keywords

Chemical beam epitaxy
GaNAs/GaAs
Rapid thermal annealing
Surface morphology

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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10.1143/jjap.43.l334

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title = "Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods",

abstract = "GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy are annealed by two methods, ex situ rapid thermal annealing (RTA) and in situ annealing in a growth chamber followed by ex situ RTA (NRTA). The effects of annealing method on the structural, morphological, and optical properties of the QWs are studied comparatively. The results show that although there is surface desorption for both RTA and NRTA, the holes on the sample surface after desorption are clearly different. RTA is better than NRTA from the viewpoints of both surface morphology and optical properties.",

keywords = "Chemical beam epitaxy, GaNAs/GaAs, Rapid thermal annealing, Surface morphology",

author = "Yijun Sun and Masayuki Yamamori and Takashi Egawa and Hiroyasu Ishikawa",

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doi = "10.1143/jjap.43.l334",

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T1 - Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods

AU - Sun, Yijun

AU - Yamamori, Masayuki

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

PY - 2004/3/1

Y1 - 2004/3/1

N2 - GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy are annealed by two methods, ex situ rapid thermal annealing (RTA) and in situ annealing in a growth chamber followed by ex situ RTA (NRTA). The effects of annealing method on the structural, morphological, and optical properties of the QWs are studied comparatively. The results show that although there is surface desorption for both RTA and NRTA, the holes on the sample surface after desorption are clearly different. RTA is better than NRTA from the viewpoints of both surface morphology and optical properties.

AB - GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy are annealed by two methods, ex situ rapid thermal annealing (RTA) and in situ annealing in a growth chamber followed by ex situ RTA (NRTA). The effects of annealing method on the structural, morphological, and optical properties of the QWs are studied comparatively. The results show that although there is surface desorption for both RTA and NRTA, the holes on the sample surface after desorption are clearly different. RTA is better than NRTA from the viewpoints of both surface morphology and optical properties.

KW - Chemical beam epitaxy

KW - GaNAs/GaAs

KW - Rapid thermal annealing

KW - Surface morphology

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