Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods

Yijun Sun, Masayuki Yamamori, Takashi Egawa, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy are annealed by two methods, ex situ rapid thermal annealing (RTA) and in situ annealing in a growth chamber followed by ex situ RTA (NRTA). The effects of annealing method on the structural, morphological, and optical properties of the QWs are studied comparatively. The results show that although there is surface desorption for both RTA and NRTA, the holes on the sample surface after desorption are clearly different. RTA is better than NRTA from the viewpoints of both surface morphology and optical properties.

Original languageEnglish
Pages (from-to)L334-L336
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number3 A
Publication statusPublished - 2004 Mar 1

Keywords

  • Chemical beam epitaxy
  • GaNAs/GaAs
  • Rapid thermal annealing
  • Surface morphology

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods'. Together they form a unique fingerprint.

  • Cite this