Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods

Yijun Sun, Masayuki Yamamori, Takashi Egawa, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy are annealed by two methods, ex situ rapid thermal annealing (RTA) and in situ annealing in a growth chamber followed by ex situ RTA (NRTA). The effects of annealing method on the structural, morphological, and optical properties of the QWs are studied comparatively. The results show that although there is surface desorption for both RTA and NRTA, the holes on the sample surface after desorption are clearly different. RTA is better than NRTA from the viewpoints of both surface morphology and optical properties.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number3 A
Publication statusPublished - 2004 Mar 1
Externally publishedYes

Fingerprint

Rapid thermal annealing
Semiconductor quantum wells
quantum wells
annealing
Desorption
Optical properties
Chemical beam epitaxy
Annealing
desorption
phytotrons
Surface morphology
optical properties
Structural properties
epitaxy

Keywords

  • Chemical beam epitaxy
  • GaNAs/GaAs
  • Rapid thermal annealing
  • Surface morphology

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods. / Sun, Yijun; Yamamori, Masayuki; Egawa, Takashi; Ishikawa, Hiroyasu.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 43, No. 3 A, 01.03.2004.

Research output: Contribution to journalArticle

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