Composite-collector InGaP/GaAs HBTs for linear power amplifiers

Takaki Niwa, Takashi Ishigaki, Naoto Kurosawa, Hidenori Shimawaki, Shinichi Tanaka

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The linear operation of a HBT with a GaAs/InGaP composite collector structure is demonstrated. The composite collector structure allows for a thin collector design that is suitable for the linear operation of a HBT without critical degradation of the breakdown voltage. The load pull measurements under a 1.95 GHz WCDMA signal have shown that a composite-collector HBT with a 400-nm thick collector layer operates with power-added-efficiency (PAE) as high as 53% at V(CE) = 3.5 V as a result of improved distortion characteristics. Despite the thin collector design, collector-emitter breakdown voltage of 11V was achieved even at current density of 10 kA/cm2. The composite-collector HBT has even greater advantage for future low voltage (< 3 V) applications where maintaining PAE and linearity becomes one of the critical issues.

Original languageEnglish
Pages (from-to)672-677
Number of pages6
JournalIEICE Transactions on Electronics
VolumeE88-C
Issue number4
DOIs
Publication statusPublished - 2005 Apr
Externally publishedYes

Keywords

  • Breakdown voltage
  • Composite collector
  • Gallium arsenide
  • HBT
  • Linearity
  • Ruggedness
  • WCDMA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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