Current-voltage characteristics and space-charge distributions in an n-i-n structure have been numerically analyzed and compared with Lampert's theory. It is found that an effective resistivity in the low-voltage region depends on acceptor and trap densities, and the length of an i-layer. The analytical model has been presented to estimate the effective resistivity and the onset voltage for current rise. The back-gating effect also has been analyzed in terms of a separation distance between devices and an acceptor density. To achieve good isolation between two devices in GaAs ICs, it is suggested that a shallow acceptor density, as well as a trap density, must be larger than a critical value.
|Number of pages||9|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1986 Sep|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)