COMPUTER-AIDED ANALYSIS OF GaAs N-I-N STRUCTURES WITH A HEAVILY COMPENSATED I-LAYER.

Kazushige Horio, Hisayoshi Yanai, Toshiaki Ikoma

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

Current-voltage characteristics and space-charge distributions in an n-i-n structure have been numerically analyzed and compared with Lampert's theory. It is found that an effective resistivity in the low-voltage region depends on acceptor and trap densities, and the length of an i-layer. The analytical model has been presented to estimate the effective resistivity and the onset voltage for current rise. The back-gating effect also has been analyzed in terms of a separation distance between devices and an acceptor density. To achieve good isolation between two devices in GaAs ICs, it is suggested that a shallow acceptor density, as well as a trap density, must be larger than a critical value.

Original languageEnglish
Pages (from-to)1242-1250
Number of pages9
JournalIEEE Transactions on Electron Devices
VolumeED-33
Issue number9
Publication statusPublished - 1986 Sep

Fingerprint

Charge distribution
Electric potential
Current voltage characteristics
Electric space charge
Analytical models
traps
electrical resistivity
electric potential
low voltage
charge distribution
space charge
isolation
gallium arsenide
estimates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

COMPUTER-AIDED ANALYSIS OF GaAs N-I-N STRUCTURES WITH A HEAVILY COMPENSATED I-LAYER. / Horio, Kazushige; Yanai, Hisayoshi; Ikoma, Toshiaki.

In: IEEE Transactions on Electron Devices, Vol. ED-33, No. 9, 09.1986, p. 1242-1250.

Research output: Contribution to journalArticle

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