COMPUTER-AIDED ANALYSIS OF GaAs N-I-N STRUCTURES WITH A HEAVILY COMPENSATED I-LAYER.

Kazushige Horio, Hisayoshi Yanai, Toshiaki Ikoma

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Abstract

Current-voltage characteristics and space-charge distributions in an n-i-n structure have been numerically analyzed and compared with Lampert's theory. It is found that an effective resistivity in the low-voltage region depends on acceptor and trap densities, and the length of an i-layer. The analytical model has been presented to estimate the effective resistivity and the onset voltage for current rise. The back-gating effect also has been analyzed in terms of a separation distance between devices and an acceptor density. To achieve good isolation between two devices in GaAs ICs, it is suggested that a shallow acceptor density, as well as a trap density, must be larger than a critical value.

Original languageEnglish
Pages (from-to)1242-1250
Number of pages9
JournalIEEE Transactions on Electron Devices
VolumeED-33
Issue number9
Publication statusPublished - 1986 Sep

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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