Abstract
Computer simulation of the point-defect fields in Czochralski Si crystals is reported. Our model includes the following factors: for crystals, variable pull rate V(t), the lagging of crystallization rate Ṽ behind V, crystal length increasing with time l(t), temperature field T(r, z) dependent on l or Ṽ, and actual shape of the crystal-melt interface; for native point defects, transport with the moving crystal, Fickian diffusion and thermodiffusion, the vacancy-self-interstitial recombination, and annealing at the crystal surface. Temperature fields established during crystal growth are calculated using a global model of heat transfer in the system. Important cases of variable V and pulling halts are considered. Simulations successfully reproduce experimental data such as the shape and position of the interstitial and vacancy regions, including the R-OSF bands. The values of model constants, except for the critical point-defect concentrations, are the same as those obtained for pedestal Si crystals.
Original language | English |
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Pages (from-to) | 464-471 |
Number of pages | 8 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 41 |
Issue number | 2 A |
DOIs | |
Publication status | Published - 2002 Feb |
Externally published | Yes |
Keywords
- Computer simulation
- Czochralski silicon
- Microdefect
- R-OSF band
- Self-interstitial
- Temperature field
- Transient process
- Vacancy
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)