Abstract
Computer simulation of the point-defect fields in Czochralski Si crystals is reported. Our model includes the following factors: for crystals, variable pull rate V(t), the lagging of crystallization rate Ṽ behind V, crystal length increasing with time l(t), temperature field T(r, z) dependent on l or Ṽ, and actual shape of the crystal-melt interface; for native point defects, transport with the moving crystal, Fickian diffusion and thermodiffusion, the vacancy-self-interstitial recombination, and annealing at the crystal surface. Temperature fields established during crystal growth are calculated using a global model of heat transfer in the system. Important cases of variable V and pulling halts are considered. Simulations successfully reproduce experimental data such as the shape and position of the interstitial and vacancy regions, including the R-OSF bands. The values of model constants, except for the critical point-defect concentrations, are the same as those obtained for pedestal Si crystals.
| Original language | English |
|---|---|
| Pages (from-to) | 464-471 |
| Number of pages | 8 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 41 |
| Issue number | 2 A |
| Publication status | Published - 2002 Feb |
| Externally published | Yes |
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Keywords
- Computer simulation
- Czochralski silicon
- Microdefect
- R-OSF band
- Self-interstitial
- Temperature field
- Transient process
- Vacancy
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Computer simulation of point-defect fields and microdefect patterns in Czochralski-grown Si crystals. / Puzanov, Nikolai I.; Eidenzon, Anna M.; Puzanov, Dmitri N.; Furukawa, Jun; Harada, Kazuhiro; Ono, Naoki; Shimanuki, Yasushi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 2 A, 02.2002, p. 464-471.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Computer simulation of point-defect fields and microdefect patterns in Czochralski-grown Si crystals
AU - Puzanov, Nikolai I.
AU - Eidenzon, Anna M.
AU - Puzanov, Dmitri N.
AU - Furukawa, Jun
AU - Harada, Kazuhiro
AU - Ono, Naoki
AU - Shimanuki, Yasushi
PY - 2002/2
Y1 - 2002/2
N2 - Computer simulation of the point-defect fields in Czochralski Si crystals is reported. Our model includes the following factors: for crystals, variable pull rate V(t), the lagging of crystallization rate Ṽ behind V, crystal length increasing with time l(t), temperature field T(r, z) dependent on l or Ṽ, and actual shape of the crystal-melt interface; for native point defects, transport with the moving crystal, Fickian diffusion and thermodiffusion, the vacancy-self-interstitial recombination, and annealing at the crystal surface. Temperature fields established during crystal growth are calculated using a global model of heat transfer in the system. Important cases of variable V and pulling halts are considered. Simulations successfully reproduce experimental data such as the shape and position of the interstitial and vacancy regions, including the R-OSF bands. The values of model constants, except for the critical point-defect concentrations, are the same as those obtained for pedestal Si crystals.
AB - Computer simulation of the point-defect fields in Czochralski Si crystals is reported. Our model includes the following factors: for crystals, variable pull rate V(t), the lagging of crystallization rate Ṽ behind V, crystal length increasing with time l(t), temperature field T(r, z) dependent on l or Ṽ, and actual shape of the crystal-melt interface; for native point defects, transport with the moving crystal, Fickian diffusion and thermodiffusion, the vacancy-self-interstitial recombination, and annealing at the crystal surface. Temperature fields established during crystal growth are calculated using a global model of heat transfer in the system. Important cases of variable V and pulling halts are considered. Simulations successfully reproduce experimental data such as the shape and position of the interstitial and vacancy regions, including the R-OSF bands. The values of model constants, except for the critical point-defect concentrations, are the same as those obtained for pedestal Si crystals.
KW - Computer simulation
KW - Czochralski silicon
KW - Microdefect
KW - R-OSF band
KW - Self-interstitial
KW - Temperature field
KW - Transient process
KW - Vacancy
UR - http://www.scopus.com/inward/record.url?scp=0036478403&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036478403&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0036478403
VL - 41
SP - 464
EP - 471
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2 A
ER -