Computer simulation of point-defect fields and microdefect patterns in Czochralski-grown Si crystals

Nikolai I. Puzanov, Anna M. Eidenzon, Dmitri N. Puzanov, Jun Furukawa, Kazuhiro Harada, Naoki Ono, Yasushi Shimanuki

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Computer simulation of the point-defect fields in Czochralski Si crystals is reported. Our model includes the following factors: for crystals, variable pull rate V(t), the lagging of crystallization rate Ṽ behind V, crystal length increasing with time l(t), temperature field T(r, z) dependent on l or Ṽ, and actual shape of the crystal-melt interface; for native point defects, transport with the moving crystal, Fickian diffusion and thermodiffusion, the vacancy-self-interstitial recombination, and annealing at the crystal surface. Temperature fields established during crystal growth are calculated using a global model of heat transfer in the system. Important cases of variable V and pulling halts are considered. Simulations successfully reproduce experimental data such as the shape and position of the interstitial and vacancy regions, including the R-OSF bands. The values of model constants, except for the critical point-defect concentrations, are the same as those obtained for pedestal Si crystals.

Original languageEnglish
Pages (from-to)464-471
Number of pages8
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number2 A
Publication statusPublished - 2002 Feb
Externally publishedYes

Fingerprint

Point defects
point defects
computerized simulation
Crystals
Computer simulation
crystals
interstitials
temperature distribution
Vacancies
Temperature distribution
pulling
crystal surfaces
crystal growth
Crystal growth
critical point
heat transfer
crystallization
Crystallization
Annealing
annealing

Keywords

  • Computer simulation
  • Czochralski silicon
  • Microdefect
  • R-OSF band
  • Self-interstitial
  • Temperature field
  • Transient process
  • Vacancy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Computer simulation of point-defect fields and microdefect patterns in Czochralski-grown Si crystals. / Puzanov, Nikolai I.; Eidenzon, Anna M.; Puzanov, Dmitri N.; Furukawa, Jun; Harada, Kazuhiro; Ono, Naoki; Shimanuki, Yasushi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 2 A, 02.2002, p. 464-471.

Research output: Contribution to journalArticle

Puzanov, Nikolai I. ; Eidenzon, Anna M. ; Puzanov, Dmitri N. ; Furukawa, Jun ; Harada, Kazuhiro ; Ono, Naoki ; Shimanuki, Yasushi. / Computer simulation of point-defect fields and microdefect patterns in Czochralski-grown Si crystals. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2002 ; Vol. 41, No. 2 A. pp. 464-471.
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AU - Furukawa, Jun

AU - Harada, Kazuhiro

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