Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Ying Peng, Lei Miao, Chengyan Liu, Haili Song, Masashi Kurosawa, Osamu Nakatsuka, Song Yi Back, Jong Soo Rhyee, Masayuki Murata, Sakae Tanemura, Takahiro Baba, Tetsuya Baba, Takahiro Ishizaki, Takao Mori

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

SiGe-based thermoelectric (TE) materials are well-known for high-temperature utilization, but rarely relevant in the low temperature region. Here a Ge quantum dots (QDs) and Sn precipitation SiGeSn hybrid film are constructed via ultrafast high temperature annealing (UHA) of a treated P-ion implantation SiGeSn film on Si/SiO2 substrate. Combining the modulation doping effect dominated by Sn precipitates and the energy filtering effect caused by Ge QDs, the optimized SiGe films achieve a giant power factor as high as 91 µW cm−1 K−2 @300 K, room temperature, while maintaining low thermal conductivity. This strategy on film construction provides a novel insight for TE materials with striking performance.

Original languageEnglish
Article number2103191
JournalAdvanced Energy Materials
Volume12
Issue number2
DOIs
Publication statusPublished - 2022 Jan 13

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

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