TY - JOUR
T1 - Construction of superconducting bulk magnet magnetron sputtering apparatus for fabrication of highly reflective optical mirrors
AU - Mizutani, Uichiro
AU - Yamaguchi, Takashi
AU - Ikuta, Hiroshi
AU - Tomofuji, Tetsuya
AU - Yanagi, Yosuke
AU - Itoh, Yoshitaka
AU - Oka, Tetsuo
N1 - Funding Information:
We wish to thank Dr. K. Murakami, Nikon Corp. and Dr. T. Matsuda, E and X-ray Corp. for valuable discussions during the course of this study. We are also grateful for the financial support for the present 3-year project from JST Innovation Plaza Tokai, Japan Science and Technology Agency.
PY - 2008/6/15
Y1 - 2008/6/15
N2 - We have developed the two-cathode magnetron sputtering apparatus equipped with superconducting permanent magnet to produce Mo/Si multi-layer films, which would potentially serve as a high-quality optical mirror at extreme ultraviolet (EUV) wavelength of 13.5 nm. The best deposition condition was searched by analyzing the structure of the inter-diffusion layer formed in the Mo/Si bi-layer film prepared under different deposition conditions. It was found that (1) Xe gas should be used as inert gas species, (2) its pressure is lower than 4 × 10-2 Pa, (3) a throw distance is longer than 250 mm and (4) discharge voltage around 2 kV. By making full use of these data, we synthesized Mo/Si multi-layer films and analyzed the structure and its effect on the reflectivity. The highest EUV-reflectivity so far obtained is 67% in the normal incident condition.
AB - We have developed the two-cathode magnetron sputtering apparatus equipped with superconducting permanent magnet to produce Mo/Si multi-layer films, which would potentially serve as a high-quality optical mirror at extreme ultraviolet (EUV) wavelength of 13.5 nm. The best deposition condition was searched by analyzing the structure of the inter-diffusion layer formed in the Mo/Si bi-layer film prepared under different deposition conditions. It was found that (1) Xe gas should be used as inert gas species, (2) its pressure is lower than 4 × 10-2 Pa, (3) a throw distance is longer than 250 mm and (4) discharge voltage around 2 kV. By making full use of these data, we synthesized Mo/Si multi-layer films and analyzed the structure and its effect on the reflectivity. The highest EUV-reflectivity so far obtained is 67% in the normal incident condition.
KW - EUV-lithography
KW - Magnetron sputtering
KW - Optical mirror
KW - Superconducting permanent magnet
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U2 - 10.1016/j.mseb.2008.03.021
DO - 10.1016/j.mseb.2008.03.021
M3 - Article
AN - SCOPUS:47649100091
SN - 0921-5107
VL - 151
SP - 84
EP - 89
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1
ER -