Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals

H. Yokoi; T. Mizumoto; M. Shimizu; T. Waniishi; N. Futakuchi; N. Kaida; Y. Nakano

doi:10.1109/CLEOPR.1999.814737

Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals

H. Yokoi, T. Mizumoto, M. Shimizu, T. Waniishi, N. Futakuchi, N. Kaida, Y. Nakano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaInAsP surfaces were investigated by contact angle measurement of a water droplet to estimate their hydrophilicity. The most hydrophilic surface of GaInAsP was obtained by the O₂ plasma activation process. Wafer direct bonding was successfully achieved between O₂ plasma activated GaInAsP and garnet crystals.

Original language	English
Title of host publication	CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1206-1207
Number of pages	2
ISBN (Electronic)	0780356616, 9780780356610
DOIs	https://doi.org/10.1109/CLEOPR.1999.814737
Publication status	Published - 1999 Jan 1
Externally published	Yes
Event	1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 - Seoul, Korea, Republic of Duration: 1999 Aug 30 → 1999 Sep 3

Publication series

Name	CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Volume	4

Conference

Conference	1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
Country/Territory	Korea, Republic of
City	Seoul
Period	99/8/30 → 99/9/3

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Computer Networks and Communications
Physics and Astronomy(all)

Access to Document

10.1109/CLEOPR.1999.814737

Cite this

Yokoi, H., Mizumoto, T., Shimizu, M., Waniishi, T., Futakuchi, N., Kaida, N., & Nakano, Y. (1999). Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals. In CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics (pp. 1206-1207). [814737] (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics; Vol. 4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.1999.814737

Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals. / Yokoi, H.; Mizumoto, T.; Shimizu, M. et al.

CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc., 1999. p. 1206-1207 814737 (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics; Vol. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yokoi, H, Mizumoto, T, Shimizu, M, Waniishi, T, Futakuchi, N, Kaida, N & Nakano, Y 1999, Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals. in CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics., 814737, CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics, vol. 4, Institute of Electrical and Electronics Engineers Inc., pp. 1206-1207, 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999, Seoul, Korea, Republic of, 99/8/30. https://doi.org/10.1109/CLEOPR.1999.814737

Yokoi H, Mizumoto T, Shimizu M, Waniishi T, Futakuchi N, Kaida N et al. Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals. In CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc. 1999. p. 1206-1207. 814737. (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics). https://doi.org/10.1109/CLEOPR.1999.814737

Yokoi, H. ; Mizumoto, T. ; Shimizu, M. et al. / Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals. CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc., 1999. pp. 1206-1207 (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics).

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abstract = "GaInAsP surfaces were investigated by contact angle measurement of a water droplet to estimate their hydrophilicity. The most hydrophilic surface of GaInAsP was obtained by the O2 plasma activation process. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.",

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doi = "10.1109/CLEOPR.1999.814737",

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AU - Kaida, N.

AU - Nakano, Y.

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AB - GaInAsP surfaces were investigated by contact angle measurement of a water droplet to estimate their hydrophilicity. The most hydrophilic surface of GaInAsP was obtained by the O2 plasma activation process. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.

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Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals

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