Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals

Hideki Yokoi, Tetsuya Mizumoto, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaInAsP surfaces were investigated by contact angle measurement of a water droplet to estimate their hydrophilicity. The most hydrophilic surface of GaInAsP was obtained by O2 plasma activation process. Wafer bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.

Original languageEnglish
Title of host publicationPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages1206-1207
Number of pages2
Volume4
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 Pacific Rim Conference on Lasers and Electro-Optcis (CLEO/PACIFIC Rim '99) - Seoul, South Korea
Duration: 1999 Aug 301999 Sep 3

Other

OtherProceedings of the 1999 Pacific Rim Conference on Lasers and Electro-Optcis (CLEO/PACIFIC Rim '99)
CitySeoul, South Korea
Period99/8/3099/9/3

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Yokoi, H., Mizumoto, T., Shimizu, M., Waniishi, T., Futakuchi, N., Kaida, N., & Nakano, Y. (1999). Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals. In Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest (Vol. 4, pp. 1206-1207). Piscataway, NJ, United States: IEEE.