TY - GEN
T1 - Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals
AU - Yokoi, H.
AU - Mizumoto, T.
AU - Shimizu, M.
AU - Waniishi, T.
AU - Futakuchi, N.
AU - Kaida, N.
AU - Nakano, Y.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - GaInAsP surfaces were investigated by contact angle measurement of a water droplet to estimate their hydrophilicity. The most hydrophilic surface of GaInAsP was obtained by the O2 plasma activation process. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.
AB - GaInAsP surfaces were investigated by contact angle measurement of a water droplet to estimate their hydrophilicity. The most hydrophilic surface of GaInAsP was obtained by the O2 plasma activation process. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.
UR - http://www.scopus.com/inward/record.url?scp=0033351877&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033351877&partnerID=8YFLogxK
U2 - 10.1109/CLEOPR.1999.814737
DO - 10.1109/CLEOPR.1999.814737
M3 - Conference contribution
AN - SCOPUS:0033351877
T3 - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
SP - 1206
EP - 1207
BT - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
Y2 - 30 August 1999 through 3 September 1999
ER -