Abstract
GaInAsP surfaces were investigated by contact angle measurement of a water droplet to estimate their hydrophilicity. The most hydrophilic surface of GaInAsP was obtained by O2 plasma activation process. Wafer bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.
| Original language | English |
|---|---|
| Title of host publication | Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 1206-1207 |
| Number of pages | 2 |
| Volume | 4 |
| Publication status | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 Pacific Rim Conference on Lasers and Electro-Optcis (CLEO/PACIFIC Rim '99) - Seoul, South Korea Duration: 1999 Aug 30 → 1999 Sep 3 |
Other
| Other | Proceedings of the 1999 Pacific Rim Conference on Lasers and Electro-Optcis (CLEO/PACIFIC Rim '99) |
|---|---|
| City | Seoul, South Korea |
| Period | 99/8/30 → 99/9/3 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Yokoi, H., Mizumoto, T., Shimizu, M., Waniishi, T., Futakuchi, N., Kaida, N., & Nakano, Y. (1999). Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals. In Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest (Vol. 4, pp. 1206-1207). Piscataway, NJ, United States: IEEE.