Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals

H. Yokoi, T. Mizumoto, M. Shimizu, T. Waniishi, N. Futakuchi, N. Kaida, Y. Nakano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaInAsP surfaces were investigated by contact angle measurement of a water droplet to estimate their hydrophilicity. The most hydrophilic surface of GaInAsP was obtained by the O2 plasma activation process. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1206-1207
Number of pages2
ISBN (Electronic)0780356616, 9780780356610
DOIs
Publication statusPublished - 1999 Jan 1
Event1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 - Seoul, Korea, Republic of
Duration: 1999 Aug 301999 Sep 3

Publication series

NameCLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Volume4

Conference

Conference1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
CountryKorea, Republic of
CitySeoul
Period99/8/3099/9/3

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications
  • Physics and Astronomy(all)

Cite this

Yokoi, H., Mizumoto, T., Shimizu, M., Waniishi, T., Futakuchi, N., Kaida, N., & Nakano, Y. (1999). Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals. In CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics (pp. 1206-1207). [814737] (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics; Vol. 4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.1999.814737