Abstract
Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate two-dimensional electron gas (2DEG) AlGaAs/GaAs FETs through only heat treatment are investigated. Ni/Ti/Au gate FETs vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300 degree C. The same experiment is made for Ti/Au gate FETs, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 241-243 |
| Number of pages | 3 |
| Journal | Electron device letters |
| Volume | EDL-5 |
| Issue number | 7 |
| Publication status | Published - 1984 Jul |
| Externally published | Yes |
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CONTROL OF THRESHOLD VOLTAGE OF AlGaAs/GaAs 2DEG FET'S THROUGH HEAT TREATMENT. / Takanashi, Y.; Hirano, M.; Sugeta, T.
In: Electron device letters, Vol. EDL-5, No. 7, 07.1984, p. 241-243.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - CONTROL OF THRESHOLD VOLTAGE OF AlGaAs/GaAs 2DEG FET'S THROUGH HEAT TREATMENT.
AU - Takanashi, Y.
AU - Hirano, M.
AU - Sugeta, T.
PY - 1984/7
Y1 - 1984/7
N2 - Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate two-dimensional electron gas (2DEG) AlGaAs/GaAs FETs through only heat treatment are investigated. Ni/Ti/Au gate FETs vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300 degree C. The same experiment is made for Ti/Au gate FETs, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.
AB - Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate two-dimensional electron gas (2DEG) AlGaAs/GaAs FETs through only heat treatment are investigated. Ni/Ti/Au gate FETs vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300 degree C. The same experiment is made for Ti/Au gate FETs, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.
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M3 - Article
AN - SCOPUS:0021457235
VL - EDL-5
SP - 241
EP - 243
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 7
ER -