Control of Threshold Voltage of AlGaAs/GaAs 2DEG FET's through Heat Treatment

Y. Takanashi; M. Hirano; T. Sugeta

doi:10.1109/EDL.1984.25903

Control of Threshold Voltage of AlGaAs/GaAs 2DEG FET's through Heat Treatment

Y. Takanashi, M. Hirano, T. Sugeta

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate 2DEG AlGaAs/GaAs FET's through only heat treatment are investigated. Ni/Ti/Au gate FET's vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300°C. The same experiment is made for Ti/Au gate FET's, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.

Original language	English
Pages (from-to)	241-243
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	5
Issue number	7
DOIs	https://doi.org/10.1109/EDL.1984.25903
Publication status	Published - 1984 Jul

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1984.25903

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title = "Control of Threshold Voltage of AlGaAs/GaAs 2DEG FET's through Heat Treatment",

abstract = "Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate 2DEG AlGaAs/GaAs FET's through only heat treatment are investigated. Ni/Ti/Au gate FET's vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300°C. The same experiment is made for Ti/Au gate FET's, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.",

author = "Y. Takanashi and M. Hirano and T. Sugeta",

year = "1984",

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doi = "10.1109/EDL.1984.25903",

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AU - Takanashi, Y.

AU - Hirano, M.

AU - Sugeta, T.

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Y1 - 1984/7

N2 - Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate 2DEG AlGaAs/GaAs FET's through only heat treatment are investigated. Ni/Ti/Au gate FET's vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300°C. The same experiment is made for Ti/Au gate FET's, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.

AB - Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate 2DEG AlGaAs/GaAs FET's through only heat treatment are investigated. Ni/Ti/Au gate FET's vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300°C. The same experiment is made for Ti/Au gate FET's, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.

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Control of Threshold Voltage of AlGaAs/GaAs 2DEG FET's through Heat Treatment

Abstract

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