Control of Threshold Voltage of AlGaAs/GaAs 2DEG FET's through Heat Treatment

Y. Takanashi; M. Hirano; T. Sugeta

doi:10.1109/EDL.1984.25903

Control of Threshold Voltage of AlGaAs/GaAs 2DEG FET's through Heat Treatment

Y. Takanashi, M. Hirano, T. Sugeta

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate 2DEG AlGaAs/GaAs FET's through only heat treatment are investigated. Ni/Ti/Au gate FET's vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300°C. The same experiment is made for Ti/Au gate FET's, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.

Original language	English
Pages (from-to)	241-243
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	5
Issue number	7
DOIs	https://doi.org/10.1109/EDL.1984.25903
Publication status	Published - 1984 Jul

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1984.25903

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@article{07d5d2d3dd5542f69b6c7bd1ae9574b3,

title = "Control of Threshold Voltage of AlGaAs/GaAs 2DEG FET's through Heat Treatment",

abstract = "Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate 2DEG AlGaAs/GaAs FET's through only heat treatment are investigated. Ni/Ti/Au gate FET's vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300°C. The same experiment is made for Ti/Au gate FET's, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.",

author = "Y. Takanashi and M. Hirano and T. Sugeta",

year = "1984",

month = jul,

doi = "10.1109/EDL.1984.25903",

language = "English",

volume = "5",

pages = "241--243",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Control of Threshold Voltage of AlGaAs/GaAs 2DEG FET's through Heat Treatment

AU - Takanashi, Y.

AU - Hirano, M.

AU - Sugeta, T.

PY - 1984/7

Y1 - 1984/7

N2 - Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate 2DEG AlGaAs/GaAs FET's through only heat treatment are investigated. Ni/Ti/Au gate FET's vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300°C. The same experiment is made for Ti/Au gate FET's, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.

AB - Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate 2DEG AlGaAs/GaAs FET's through only heat treatment are investigated. Ni/Ti/Au gate FET's vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300°C. The same experiment is made for Ti/Au gate FET's, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0021457235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021457235&partnerID=8YFLogxK

U2 - 10.1109/EDL.1984.25903

DO - 10.1109/EDL.1984.25903

M3 - Article

AN - SCOPUS:0021457235

VL - 5

SP - 241

EP - 243

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

ER -

Control of Threshold Voltage of AlGaAs/GaAs 2DEG FET's through Heat Treatment

Abstract

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