Abstract
Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate two-dimensional electron gas (2DEG) AlGaAs/GaAs FETs through only heat treatment are investigated. Ni/Ti/Au gate FETs vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300 degree C. The same experiment is made for Ti/Au gate FETs, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 241-243 |
| Number of pages | 3 |
| Journal | Electron device letters |
| Volume | EDL-5 |
| Issue number | 7 |
| Publication status | Published - 1984 Jul |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Takanashi, Y., Hirano, M., & Sugeta, T. (1984). CONTROL OF THRESHOLD VOLTAGE OF AlGaAs/GaAs 2DEG FET'S THROUGH HEAT TREATMENT. Electron device letters, EDL-5(7), 241-243.