CONTROL OF THRESHOLD VOLTAGE OF AlGaAs/GaAs 2DEG FET'S THROUGH HEAT TREATMENT.

Y. Takanashi, M. Hirano, T. Sugeta

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate two-dimensional electron gas (2DEG) AlGaAs/GaAs FETs through only heat treatment are investigated. Ni/Ti/Au gate FETs vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300 degree C. The same experiment is made for Ti/Au gate FETs, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.

Original languageEnglish
Pages (from-to)241-243
Number of pages3
JournalElectron device letters
VolumeEDL-5
Issue number7
Publication statusPublished - 1984 Jul
Externally publishedYes

Fingerprint

Two dimensional electron gas
Field effect transistors
Threshold voltage
Heat treatment
Metals
Gates (transistor)
Voltage control
gallium arsenide
Degradation
titanium nickelide
Experiments

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Takanashi, Y., Hirano, M., & Sugeta, T. (1984). CONTROL OF THRESHOLD VOLTAGE OF AlGaAs/GaAs 2DEG FET'S THROUGH HEAT TREATMENT. Electron device letters, EDL-5(7), 241-243.

CONTROL OF THRESHOLD VOLTAGE OF AlGaAs/GaAs 2DEG FET'S THROUGH HEAT TREATMENT. / Takanashi, Y.; Hirano, M.; Sugeta, T.

In: Electron device letters, Vol. EDL-5, No. 7, 07.1984, p. 241-243.

Research output: Contribution to journalArticle

Takanashi, Y, Hirano, M & Sugeta, T 1984, 'CONTROL OF THRESHOLD VOLTAGE OF AlGaAs/GaAs 2DEG FET'S THROUGH HEAT TREATMENT.', Electron device letters, vol. EDL-5, no. 7, pp. 241-243.
Takanashi, Y. ; Hirano, M. ; Sugeta, T. / CONTROL OF THRESHOLD VOLTAGE OF AlGaAs/GaAs 2DEG FET'S THROUGH HEAT TREATMENT. In: Electron device letters. 1984 ; Vol. EDL-5, No. 7. pp. 241-243.
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