Controlled growth of Zn nano-dots on a Si (111) -7×7 surface saturated with C2H5OH

Xiaohong Jiang, Zhaoxiong Xie, Masayuki Shimojo, Ken Ichi Tanaka

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Metal atoms bonded with Si adatoms on the Si (111) - (7×7) surface undergo migration by hopping adjacent Si-rest atoms with dangling bond. By saturated adsorption of Si (111) - (7×7) surface with C2 H5 OH, the whole Si-rest atoms and a half of Si adatoms are occupied with Si-H and Si-O C2 H5, so that the Zn atoms adsorbed on this surface cannot migrate by hopping. When Zn atoms were deposited on this surface, ca. 5 nm Zn dots were grown in the hexagonal spacing of ca. 5.4 nm width around the corner holes, which work as a mold. This is quite different from the growth of honeycomb layers composed of Zn3 clusters on the clean Si (111) - (7×7) surface. The dots grow up to nine (1.97 nm) to 13 layers (2.64 nm) by keeping their size, which implies a layer-by-layer growth of dots in the mold, where the growth is controlled by the kinetics instead of energetic feasibility.

Original languageEnglish
Article number144705
JournalJournal of Chemical Physics
Volume127
Issue number14
DOIs
Publication statusPublished - 2007 Oct 18

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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