Copper and tungsten metallization using MOCVD-TiN barrier layer (Invited)

K.Ueno K.Ueno, Kazuyoshi Ueno

Research output: Contribution to journalArticle

Original languageEnglish
JournalProceedings of Annual Dielectric and CVD Metallization Symposium
Publication statusPublished - 1995 Nov 1

Cite this

@article{07dbd379b35a4850a27a8f5d04c9a1d5,
title = "Copper and tungsten metallization using MOCVD-TiN barrier layer (Invited)",
author = "K.Ueno K.Ueno and Kazuyoshi Ueno",
year = "1995",
month = "11",
day = "1",
language = "English",
journal = "Proceedings of Annual Dielectric and CVD Metallization Symposium",

}

TY - JOUR

T1 - Copper and tungsten metallization using MOCVD-TiN barrier layer (Invited)

AU - K.Ueno, K.Ueno

AU - Ueno, Kazuyoshi

PY - 1995/11/1

Y1 - 1995/11/1

M3 - Article

JO - Proceedings of Annual Dielectric and CVD Metallization Symposium

JF - Proceedings of Annual Dielectric and CVD Metallization Symposium

ER -