Correlation between electrical and surface properties of n-GaN on sapphire grown by metal-organic chemical vapor deposition

Naoyuki Nakada, Masayoshi Mori, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Lightly doped n-GaN epilayers were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. The grown n-GaN epilayers were characterized using atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence and Hall effect measurements. Enhanced PL intensity and low dark spot density (DSD) were observed on the aligned step structure n-GaN. The samples with these aligned step structure showed high electron mobilities with good structural and optical properties, while the samples with the anisotropic step structure showed broadened XRD FWHM values, low mobilities, and poor structural and optical properties. The low Hall mobility of n-GaN is due to the scattering of charged threading dislocations. A clear correlation was observed between Hall mobility and DSD by AFM. The AFM surface observation is also a better method for the evaluation of the electron mobility of lightly doped MOCVD grown n-GaN.

Original languageEnglish
Pages (from-to)2573-2577
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number5 A
Publication statusPublished - 2003 May
Externally publishedYes

Fingerprint

Organic chemicals
Sapphire
surface properties
Surface properties
metalorganic chemical vapor deposition
Chemical vapor deposition
Atomic force microscopy
Hall mobility
sapphire
Electric properties
Epilayers
Electron mobility
electrical properties
atomic force microscopy
electron mobility
Structural properties
Optical properties
Metals
optical properties
X ray diffraction

Keywords

  • AFM
  • Dark spot
  • GaN
  • Mobility
  • MOCVD
  • Threading dislocation
  • XRD

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Correlation between electrical and surface properties of n-GaN on sapphire grown by metal-organic chemical vapor deposition. / Nakada, Naoyuki; Mori, Masayoshi; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 5 A, 05.2003, p. 2573-2577.

Research output: Contribution to journalArticle

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