TY - JOUR
T1 - Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
AU - Maeda, Erika
AU - Nabatame, Toshihide
AU - Hirose, Masafumi
AU - Inoue, Mari
AU - Ohi, Akihiko
AU - Ikeda, Naoki
AU - Kiyono, Hajime
N1 - Publisher Copyright:
© 2020 Author(s).
PY - 2020/5/1
Y1 - 2020/5/1
N2 - The growth rate of an SiO2 film on various metal-oxide (M-O) underlayers by plasma-enhanced atomic layer deposition (ALD) using tris(dimethylamino)silane precursor and O2 plasma gas is systematically investigated, and the effect of the difference in the electronegativity of the M-O underlayer on the ALD-SiO2 growth mechanism is also discussed. All data for the ALD-SiO2 film thickness on HfO2, TiO2, Al2O3, and SiO2 underlayers satisfied a linear relationship as a function of the ALD cycle. The growth per cycle (GPC) value of the ALD-SiO2 film increased in the following order: SiO2 (0.043 nm/cycle) < Al2O3 (0.14) < TiO2 (0.17) < HfO2 (0.22). On the other hand, the negative charge concentration of oxygen atoms in the M-O underlayer becomes higher in the following order: Si-O (1.76 eV) < Al-O (2.03) < Ti-O (2.18) < Hf-O (2.27) due to the electronegativity difference between the Si, Al, Ti, Hf, and O elements of the M-O underlayer. A correlation between the GPC of the ALD-SiO2 film and the difference in the electronegativity of the M-O underlayer was also determined.
AB - The growth rate of an SiO2 film on various metal-oxide (M-O) underlayers by plasma-enhanced atomic layer deposition (ALD) using tris(dimethylamino)silane precursor and O2 plasma gas is systematically investigated, and the effect of the difference in the electronegativity of the M-O underlayer on the ALD-SiO2 growth mechanism is also discussed. All data for the ALD-SiO2 film thickness on HfO2, TiO2, Al2O3, and SiO2 underlayers satisfied a linear relationship as a function of the ALD cycle. The growth per cycle (GPC) value of the ALD-SiO2 film increased in the following order: SiO2 (0.043 nm/cycle) < Al2O3 (0.14) < TiO2 (0.17) < HfO2 (0.22). On the other hand, the negative charge concentration of oxygen atoms in the M-O underlayer becomes higher in the following order: Si-O (1.76 eV) < Al-O (2.03) < Ti-O (2.18) < Hf-O (2.27) due to the electronegativity difference between the Si, Al, Ti, Hf, and O elements of the M-O underlayer. A correlation between the GPC of the ALD-SiO2 film and the difference in the electronegativity of the M-O underlayer was also determined.
UR - http://www.scopus.com/inward/record.url?scp=85083287306&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85083287306&partnerID=8YFLogxK
U2 - 10.1116/6.0000078
DO - 10.1116/6.0000078
M3 - Article
AN - SCOPUS:85083287306
SN - 0734-2101
VL - 38
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
IS - 3
M1 - 032409
ER -