Cross-sectional morphological profiles of ripples on Si, SiC, and HOPG

Takuro Tomita, Ryota Kumai, Shigeki Matsuo, Shuichi Hashimoto, Makoto Yamaguchi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The cross-sectional profiles of ripple structures on silicon (Si), silicon carbide (SiC), and highly oriented pyrolytic graphite (HOPG) were studied by direct observation. The ripple structures were cut by an ion beam, and their cross sections were observed by scanning electron microscopy. The results showed that the cross sections of coarse ripples on Si and SiC have a convex shape with narrower valleys, whereas those of HOPG have sharp ridges and wide wings with a poorer aspect ratio. This difference may arise from the difference in material phase conversion processes induced by femtosecond laser irradiation. The cross-sectional profiles of fine ripples on SiC and HOPG, which give useful information on the ripple formation process, are also discussed.

Original languageEnglish
Pages (from-to)271-276
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume97
Issue number2
DOIs
Publication statusPublished - 2009 Nov
Externally publishedYes

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Silicon
Silicon carbide
Laser beam effects
Ultrashort pulses
Ion beams
Aspect ratio
Scanning electron microscopy
silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemistry(all)

Cite this

Cross-sectional morphological profiles of ripples on Si, SiC, and HOPG. / Tomita, Takuro; Kumai, Ryota; Matsuo, Shigeki; Hashimoto, Shuichi; Yamaguchi, Makoto.

In: Applied Physics A: Materials Science and Processing, Vol. 97, No. 2, 11.2009, p. 271-276.

Research output: Contribution to journalArticle

Tomita, Takuro ; Kumai, Ryota ; Matsuo, Shigeki ; Hashimoto, Shuichi ; Yamaguchi, Makoto. / Cross-sectional morphological profiles of ripples on Si, SiC, and HOPG. In: Applied Physics A: Materials Science and Processing. 2009 ; Vol. 97, No. 2. pp. 271-276.
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