Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface

T. Okada, H. Kawahara, Y. Ishida, R. Kumai, T. Tomita, Shigeki Matsuo, S. Hashimoto, M. Kawamoto, Y. Makita, M. Yamaguchi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The microstructures of femtosecond laser-induced ripples formed on a 4H-SiC single-crystal surface were studied by cross-sectional transmission electron microscopy (TEM), with particular attention on the crystal structure underlying fine and coarse ripples differing in period and morphology. Conventional and high-resolution TEM analyses showed that a continuous amorphous layer approximately 10 to 50 nm thick covers the topmost region of both fine and coarse ripples. These results strongly suggest that the fundamental surface deformation process is common for the entire region of fine and coarse ripples, even though the factors that determine their periods are different.

Original languageEnglish
Pages (from-to)665-668
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume92
Issue number3
DOIs
Publication statusPublished - 2008 Aug
Externally publishedYes

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Single crystal surfaces
High resolution transmission electron microscopy
Ultrashort pulses
ripples
crystal surfaces
Crystal structure
Transmission electron microscopy
transmission electron microscopy
Microstructure
Lasers
single crystals
lasers
microstructure
crystal structure
high resolution

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface. / Okada, T.; Kawahara, H.; Ishida, Y.; Kumai, R.; Tomita, T.; Matsuo, Shigeki; Hashimoto, S.; Kawamoto, M.; Makita, Y.; Yamaguchi, M.

In: Applied Physics A: Materials Science and Processing, Vol. 92, No. 3, 08.2008, p. 665-668.

Research output: Contribution to journalArticle

Okada, T, Kawahara, H, Ishida, Y, Kumai, R, Tomita, T, Matsuo, S, Hashimoto, S, Kawamoto, M, Makita, Y & Yamaguchi, M 2008, 'Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface', Applied Physics A: Materials Science and Processing, vol. 92, no. 3, pp. 665-668. https://doi.org/10.1007/s00339-008-4611-2
Okada, T. ; Kawahara, H. ; Ishida, Y. ; Kumai, R. ; Tomita, T. ; Matsuo, Shigeki ; Hashimoto, S. ; Kawamoto, M. ; Makita, Y. ; Yamaguchi, M. / Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface. In: Applied Physics A: Materials Science and Processing. 2008 ; Vol. 92, No. 3. pp. 665-668.
@article{d3a6616e7ae045c5b878e5b0d05c0494,
title = "Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface",
abstract = "The microstructures of femtosecond laser-induced ripples formed on a 4H-SiC single-crystal surface were studied by cross-sectional transmission electron microscopy (TEM), with particular attention on the crystal structure underlying fine and coarse ripples differing in period and morphology. Conventional and high-resolution TEM analyses showed that a continuous amorphous layer approximately 10 to 50 nm thick covers the topmost region of both fine and coarse ripples. These results strongly suggest that the fundamental surface deformation process is common for the entire region of fine and coarse ripples, even though the factors that determine their periods are different.",
author = "T. Okada and H. Kawahara and Y. Ishida and R. Kumai and T. Tomita and Shigeki Matsuo and S. Hashimoto and M. Kawamoto and Y. Makita and M. Yamaguchi",
year = "2008",
month = "8",
doi = "10.1007/s00339-008-4611-2",
language = "English",
volume = "92",
pages = "665--668",
journal = "Applied Physics",
issn = "0340-3793",
publisher = "Springer Heidelberg",
number = "3",

}

TY - JOUR

T1 - Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface

AU - Okada, T.

AU - Kawahara, H.

AU - Ishida, Y.

AU - Kumai, R.

AU - Tomita, T.

AU - Matsuo, Shigeki

AU - Hashimoto, S.

AU - Kawamoto, M.

AU - Makita, Y.

AU - Yamaguchi, M.

PY - 2008/8

Y1 - 2008/8

N2 - The microstructures of femtosecond laser-induced ripples formed on a 4H-SiC single-crystal surface were studied by cross-sectional transmission electron microscopy (TEM), with particular attention on the crystal structure underlying fine and coarse ripples differing in period and morphology. Conventional and high-resolution TEM analyses showed that a continuous amorphous layer approximately 10 to 50 nm thick covers the topmost region of both fine and coarse ripples. These results strongly suggest that the fundamental surface deformation process is common for the entire region of fine and coarse ripples, even though the factors that determine their periods are different.

AB - The microstructures of femtosecond laser-induced ripples formed on a 4H-SiC single-crystal surface were studied by cross-sectional transmission electron microscopy (TEM), with particular attention on the crystal structure underlying fine and coarse ripples differing in period and morphology. Conventional and high-resolution TEM analyses showed that a continuous amorphous layer approximately 10 to 50 nm thick covers the topmost region of both fine and coarse ripples. These results strongly suggest that the fundamental surface deformation process is common for the entire region of fine and coarse ripples, even though the factors that determine their periods are different.

UR - http://www.scopus.com/inward/record.url?scp=48349128085&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48349128085&partnerID=8YFLogxK

U2 - 10.1007/s00339-008-4611-2

DO - 10.1007/s00339-008-4611-2

M3 - Article

AN - SCOPUS:48349128085

VL - 92

SP - 665

EP - 668

JO - Applied Physics

JF - Applied Physics

SN - 0340-3793

IS - 3

ER -