Cross-sectional TEM analysis of structural change in 4H-SiC single crystal irradiated by femtosecond laser pulses

Hiroyuki Kawahara, Tatsuya Okada, Ryota Kumai, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Makoto Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We carried out cross-sectional transmission electron microscopy (TEM) investigation of femtosecond laser-induced ripples formed on 4H-SiC single crystal surface. Here, we paid attention to the crystal structures underlying the coarse and fine ripples and the three-dimensional distribution of amorphous phase. Conventional and high-resolution TEM analyses made clear that a continuous amorphous layer approximately of 50 nm thick exist at the topmost region of both coarse and fine ripples. The result strongly suggests that the fundamental surface deformation process is common for coarse and fine ripples, even though the factors which determine their periods are different.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsTakashi Fuyuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Akira Suzuki
PublisherTrans Tech Publications Ltd
Pages883-886
Number of pages4
ISBN (Print)9780878493579
Publication statusPublished - 2009 Jan 1
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: 2007 Oct 142007 Oct 19

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476

Conference

Conference12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period07/10/1407/10/19

Keywords

  • 4H-SiC
  • Femotosecond laser
  • Ripple
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Kawahara, H., Okada, T., Kumai, R., Tomita, T., Matsuo, S., Hashimoto, S., & Yamaguchi, M. (2009). Cross-sectional TEM analysis of structural change in 4H-SiC single crystal irradiated by femtosecond laser pulses. In T. Fuyuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & A. Suzuki (Eds.), Silicon Carbide and Related Materials 2007 (pp. 883-886). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd.