Crystal growth of C-doped MgB2 superconductors

Accidental doping and inhomogeneity

Sergey Lee, Takahiko Masui, Ayako Yamamoto, Hiroshi Uchiyama, Setsuko Tajima

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

Here, we discuss the possibility of accidental C-doping of MgB2 crystals and inhomogeneous C distribution of Mg(B1-xC x)2 single crystals with x=0.02-0.125 grown under high pressure. Structure refinement was performed on the heavily C-doped crystal with x=0.125 which has confirmed no evidence of microscopic phase separation. Resistivity and magnetization measurements were also preformed on several of as-grown and post-annealed crystals with a inhomogeneous C distribution.

Original languageEnglish
Pages (from-to)31-35
Number of pages5
JournalPhysica C: Superconductivity and its Applications
Volume412-414
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2004 Oct
Externally publishedYes

Fingerprint

Crystallization
Crystal growth
Superconducting materials
crystal growth
inhomogeneity
Doping (additives)
Crystals
doped crystals
crystals
Phase separation
magnetization
electrical resistivity
Magnetization
single crystals
Single crystals

Keywords

  • Carbon doping
  • Chemical inhomogeneity
  • Crystals structure
  • Magnesium diboride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Crystal growth of C-doped MgB2 superconductors : Accidental doping and inhomogeneity. / Lee, Sergey; Masui, Takahiko; Yamamoto, Ayako; Uchiyama, Hiroshi; Tajima, Setsuko.

In: Physica C: Superconductivity and its Applications, Vol. 412-414, No. SPEC. ISS., 10.2004, p. 31-35.

Research output: Contribution to journalArticle

Lee, Sergey ; Masui, Takahiko ; Yamamoto, Ayako ; Uchiyama, Hiroshi ; Tajima, Setsuko. / Crystal growth of C-doped MgB2 superconductors : Accidental doping and inhomogeneity. In: Physica C: Superconductivity and its Applications. 2004 ; Vol. 412-414, No. SPEC. ISS. pp. 31-35.
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