Abstract
Here, we discuss the possibility of accidental C-doping of MgB2 crystals and inhomogeneous C distribution of Mg(B1-xC x)2 single crystals with x=0.02-0.125 grown under high pressure. Structure refinement was performed on the heavily C-doped crystal with x=0.125 which has confirmed no evidence of microscopic phase separation. Resistivity and magnetization measurements were also preformed on several of as-grown and post-annealed crystals with a inhomogeneous C distribution.
| Original language | English |
|---|---|
| Pages (from-to) | 31-35 |
| Number of pages | 5 |
| Journal | Physica C: Superconductivity and its applications |
| Volume | 412-414 |
| Issue number | SPEC. ISS. |
| DOIs | |
| Publication status | Published - 2004 Oct 1 |
| Externally published | Yes |
Keywords
- Carbon doping
- Chemical inhomogeneity
- Crystals structure
- Magnesium diboride
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
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Cite this
Lee, S., Masui, T., Yamamoto, A., Uchiyama, H., & Tajima, S. (2004). Crystal growth of C-doped MgB2 superconductors: Accidental doping and inhomogeneity. Physica C: Superconductivity and its applications, 412-414(SPEC. ISS.), 31-35. https://doi.org/10.1016/j.physc.2004.01.036