Crystal growth of GaN on GaP substrate using RF plasma assisted metalorganic chemical vapor deposition for blue emitting laser diode on Si

H. Ishikawa, M. Tsuchida, C. L. Shao, T. Soga, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)P-19
JournalDefault journal
Publication statusPublished - 1995 Sep 1

Cite this

Crystal growth of GaN on GaP substrate using RF plasma assisted metalorganic chemical vapor deposition for blue emitting laser diode on Si. / Ishikawa, H.; Tsuchida, M.; Shao, C. L.; Soga, T.; Jimbo, T.; Umeno, M.

In: Default journal, 01.09.1995, p. P-19.

Research output: Contribution to journalArticle

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title = "Crystal growth of GaN on GaP substrate using RF plasma assisted metalorganic chemical vapor deposition for blue emitting laser diode on Si",
author = "H. Ishikawa and M. Tsuchida and Shao, {C. L.} and T. Soga and T. Jimbo and M. Umeno",
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pages = "P--19",
journal = "Default journal",

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AU - Ishikawa, H.

AU - Tsuchida, M.

AU - Shao, C. L.

AU - Soga, T.

AU - Jimbo, T.

AU - Umeno, M.

PY - 1995/9/1

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M3 - Article

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