Crystal Growth of Si-Ge Semiconductor Alloys by Using Containerless Process

Taro Toyoda; Taro Toyoda;Tomokikuwahara;Katsuhisa Nagayama

Crystal Growth of Si-Ge Semiconductor Alloys by Using Containerless Process

Taro Toyoda, Taro Toyoda;Tomokikuwahara;Katsuhisa Nagayama

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	16-16
Journal	8th Japan-China-Korea Workshop on Microgravity Scences for Asian microgravity Pre-Symposium and International Mohri poster Session Final Program
Publication status	Published - 2010 Sept 22

Cite this

Crystal Growth of Si-Ge Semiconductor Alloys by Using Containerless Process. / Toyoda, Taro; Nagayama, Taro Toyoda;Tomokikuwahara;Katsuhisa.

In: 8th Japan-China-Korea Workshop on Microgravity Scences for Asian microgravity Pre-Symposium and International Mohri poster Session Final Program, 22.09.2010, p. 16-16.

Research output: Contribution to journal › Article › peer-review

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title = "Crystal Growth of Si-Ge Semiconductor Alloys by Using Containerless Process",

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journal = "8th Japan-China-Korea Workshop on Microgravity Scences for Asian microgravity Pre-Symposium and International Mohri poster Session Final Program",

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JO - 8th Japan-China-Korea Workshop on Microgravity Scences for Asian microgravity Pre-Symposium and International Mohri poster Session Final Program

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