Crystallization of Ge thin films by Au-induced layer exchange: Effect of Au layer thickness on Ge crystal orientation

Narin Sunthornpan, Kenjiro Kimura, Kentaro Kyuno

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Au layer thickness dependence (9-34 nm) of Ge crystallization in the metal-induced layer exchange process has been investigated. It has been found that Ge crystals are (111) oriented when the Au layer is as thin as 9 nm, whereas crystal grains are randomly oriented when the Au layer is as thick as 34 nm. The difference is discussed in terms of the difference in the position of nucleation sites of Ge crystals.

Original languageEnglish
Article numberSB1029
JournalJapanese Journal of Applied Physics
Volume61
DOIs
Publication statusPublished - 2022 Feb

Keywords

  • Au-induced layer exchange
  • Crystallization
  • Germanium
  • Low-temperature crystallization
  • Metal-induced crystallization (MIC)
  • Semiconductor

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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