Cu NMR Study of Bilayer HgBa2CaCu2O6+δ. Variation of Pseudo Spin-Gap Spectrum

Yutaka Itoh, Ayako Yamamoto, Takato Machi, Keiichi Tanabe

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We observed the pseudo spin-gap behavior in the T-dependences of 63Cu Knight shift and NMR relaxation rates, as well as electrical resistivity, over a wide doping range for the bilayer high-Tc HgBa2CaCu2O6+δ using 63Cu NMR spin-echo technique. We found a difference in the doping dependence of the pseudo spin-gap behavior between HgBa2CaCu2O6+δ and the previous monolayer HgBa2CuO4+δ. The results indicate that the pseudo spin-gap behavior strongly depends on the underlying electronic states.

Original languageEnglish
Pages (from-to)2212-2214
Number of pages3
JournalJournal of the Physical Society of Japan
Volume67
Issue number7
DOIs
Publication statusPublished - 1998
Externally publishedYes

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nuclear magnetic resonance
echoes
electrical resistivity
electronics

Keywords

  • bilayer cuprate
  • HgBaCaCuO
  • high T cuprate
  • NMR
  • pseudo spin-gap

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Cu NMR Study of Bilayer HgBa2CaCu2O6+δ. Variation of Pseudo Spin-Gap Spectrum. / Itoh, Yutaka; Yamamoto, Ayako; Machi, Takato; Tanabe, Keiichi.

In: Journal of the Physical Society of Japan, Vol. 67, No. 7, 1998, p. 2212-2214.

Research output: Contribution to journalArticle

Itoh, Yutaka ; Yamamoto, Ayako ; Machi, Takato ; Tanabe, Keiichi. / Cu NMR Study of Bilayer HgBa2CaCu2O6+δ. Variation of Pseudo Spin-Gap Spectrum. In: Journal of the Physical Society of Japan. 1998 ; Vol. 67, No. 7. pp. 2212-2214.
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AU - Machi, Takato

AU - Tanabe, Keiichi

PY - 1998

Y1 - 1998

N2 - We observed the pseudo spin-gap behavior in the T-dependences of 63Cu Knight shift and NMR relaxation rates, as well as electrical resistivity, over a wide doping range for the bilayer high-Tc HgBa2CaCu2O6+δ using 63Cu NMR spin-echo technique. We found a difference in the doping dependence of the pseudo spin-gap behavior between HgBa2CaCu2O6+δ and the previous monolayer HgBa2CuO4+δ. The results indicate that the pseudo spin-gap behavior strongly depends on the underlying electronic states.

AB - We observed the pseudo spin-gap behavior in the T-dependences of 63Cu Knight shift and NMR relaxation rates, as well as electrical resistivity, over a wide doping range for the bilayer high-Tc HgBa2CaCu2O6+δ using 63Cu NMR spin-echo technique. We found a difference in the doping dependence of the pseudo spin-gap behavior between HgBa2CaCu2O6+δ and the previous monolayer HgBa2CuO4+δ. The results indicate that the pseudo spin-gap behavior strongly depends on the underlying electronic states.

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