Abstract
We observed the pseudo spin-gap behavior in the T-dependences of 63Cu Knight shift and NMR relaxation rates, as well as electrical resistivity, over a wide doping range for the bilayer high-Tc HgBa2CaCu2O6+δ using 63Cu NMR spin-echo technique. We found a difference in the doping dependence of the pseudo spin-gap behavior between HgBa2CaCu2O6+δ and the previous monolayer HgBa2CuO4+δ. The results indicate that the pseudo spin-gap behavior strongly depends on the underlying electronic states.
Original language | English |
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Pages (from-to) | 2212-2214 |
Number of pages | 3 |
Journal | Journal of the Physical Society of Japan |
Volume | 67 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1998 Jan 1 |
Externally published | Yes |
Keywords
- HgBaCaCuO
- NMR
- bilayer cuprate
- high T cuprate
- pseudo spin-gap
ASJC Scopus subject areas
- Physics and Astronomy(all)