Current collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors with and without surface passivation

S. Arulkumaran, T. Hibino, T. Egawa, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

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Abstract

Drain current (ID) collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with and without surface passivation (electron-beam evaporated SiO2) were demonstrated using dc and pulsed (120 Hz) IDs-VDS characteristics up to the drain supply voltage of 40V. The observation of small ID transients and negligibly small hysteresis widths with small white light illumination effects on both passivated and unpassivated i-GaN/AlGaN/GaN HEMTs confirms the suppression of collapse related traps. Three and two thermally activated trap levels were observed in passivated (+0.395, -0.079, and -0.949 eV) and unpassivated (-0.066 and -0.368 eV) AlGaN/GaN HEMTs, respectively. However, I-GaN/AlGaN/GaN HEMTs with and without surface passivation exhibited only one trap level at -0.161 eV. These results show that the addition of thin cap layer i-GaN screens the collapse-related surface states/traps from channel.

Original languageEnglish
Pages (from-to)5745-5747
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number23
DOIs
Publication statusPublished - 2004 Dec 6
Externally publishedYes

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high electron mobility transistors
passivity
traps
caps
illumination
hysteresis
retarding
electron beams
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Current collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors with and without surface passivation. / Arulkumaran, S.; Hibino, T.; Egawa, T.; Ishikawa, Hiroyasu.

In: Applied Physics Letters, Vol. 85, No. 23, 06.12.2004, p. 5745-5747.

Research output: Contribution to journalArticle

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AB - Drain current (ID) collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with and without surface passivation (electron-beam evaporated SiO2) were demonstrated using dc and pulsed (120 Hz) IDs-VDS characteristics up to the drain supply voltage of 40V. The observation of small ID transients and negligibly small hysteresis widths with small white light illumination effects on both passivated and unpassivated i-GaN/AlGaN/GaN HEMTs confirms the suppression of collapse related traps. Three and two thermally activated trap levels were observed in passivated (+0.395, -0.079, and -0.949 eV) and unpassivated (-0.066 and -0.368 eV) AlGaN/GaN HEMTs, respectively. However, I-GaN/AlGaN/GaN HEMTs with and without surface passivation exhibited only one trap level at -0.161 eV. These results show that the addition of thin cap layer i-GaN screens the collapse-related surface states/traps from channel.

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