Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO2 from a Cu capped Co-C layer

Hiroyasu Ichikawa, Kazuyoshi Ueno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To improve the crystallinity of multilayer graphene (MLG) directly deposited on SiO2 for interconnect applications, a new solid phase precipitation (SPP) process involving current stress is investigated. It is found that the MLG crystallinity precipitated from a Cu capped Co-C layer can be improved by the vertical current to the Cu/Co-C but not by the horizontal current. The current enhanced SPP (CE-SPP) is expected as a mean to improve the MLG crystallinity directly deposited on SiO2.

LanguageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages244-246
Number of pages3
ISBN (Electronic)9781509046591
DOIs
StatePublished - 2017 Jun 13
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: 2017 Feb 282017 Mar 2

Other

Other2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
CountryJapan
CityToyama
Period17/2/2817/3/2

Fingerprint

Graphene
Multilayers

Keywords

  • interconnect
  • multilayer graphene

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Ichikawa, H., & Ueno, K. (2017). Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO2 from a Cu capped Co-C layer. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 244-246). [7947583] Institute of Electrical and Electronics Engineers Inc.. DOI: 10.1109/EDTM.2017.7947583

Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO2 from a Cu capped Co-C layer. / Ichikawa, Hiroyasu; Ueno, Kazuyoshi.

2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 244-246 7947583.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ichikawa, H & Ueno, K 2017, Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO2 from a Cu capped Co-C layer. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947583, Institute of Electrical and Electronics Engineers Inc., pp. 244-246, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 17/2/28. DOI: 10.1109/EDTM.2017.7947583
Ichikawa H, Ueno K. Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO2 from a Cu capped Co-C layer. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc.2017. p. 244-246. 7947583. Available from, DOI: 10.1109/EDTM.2017.7947583
Ichikawa, Hiroyasu ; Ueno, Kazuyoshi. / Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO2 from a Cu capped Co-C layer. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 244-246
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