Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO2 from a Cu capped Co-C layer

Hiroyasu Ichikawa; Kazuyoshi Ueno

doi:10.1109/EDTM.2017.7947583

Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO₂ from a Cu capped Co-C layer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

To improve the crystallinity of multilayer graphene (MLG) directly deposited on SiO₂ for interconnect applications, a new solid phase precipitation (SPP) process involving current stress is investigated. It is found that the MLG crystallinity precipitated from a Cu capped Co-C layer can be improved by the vertical current to the Cu/Co-C but not by the horizontal current. The current enhanced SPP (CE-SPP) is expected as a mean to improve the MLG crystallinity directly deposited on SiO₂.

Original language	English
Title of host publication	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	244-246
Number of pages	3
ISBN (Electronic)	9781509046591
DOIs	https://doi.org/10.1109/EDTM.2017.7947583
Publication status	Published - 2017 Jun 13
Event	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan Duration: 2017 Feb 28 → 2017 Mar 2

Other

Other	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country/Territory	Japan
City	Toyama
Period	17/2/28 → 17/3/2

Keywords

interconnect
multilayer graphene

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDTM.2017.7947583

Cite this

Ichikawa, H., & Ueno, K. (2017). Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO₂ from a Cu capped Co-C layer. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 244-246). [7947583] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947583

Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO₂ from a Cu capped Co-C layer. / Ichikawa, Hiroyasu; Ueno, Kazuyoshi.

2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 244-246 7947583.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ichikawa, H & Ueno, K 2017, Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO₂ from a Cu capped Co-C layer. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947583, Institute of Electrical and Electronics Engineers Inc., pp. 244-246, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 17/2/28. https://doi.org/10.1109/EDTM.2017.7947583

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abstract = "To improve the crystallinity of multilayer graphene (MLG) directly deposited on SiO2 for interconnect applications, a new solid phase precipitation (SPP) process involving current stress is investigated. It is found that the MLG crystallinity precipitated from a Cu capped Co-C layer can be improved by the vertical current to the Cu/Co-C but not by the horizontal current. The current enhanced SPP (CE-SPP) is expected as a mean to improve the MLG crystallinity directly deposited on SiO2.",

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